n+/p Diodes Realized in SiC by Phosphorus Ion Implantation: Electrical Characterization as a Function of Temperature

Abstract:

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n+/p diodes have been realized by 300°C phosphorus ion implantation and subsequent annealing at 1300°C. An electrical characterization of the devices as well as a study of the defects introduced by the implantation process has been made. I-V measurements pointed out that the diodes maintain a good rectifying behavior up to 737K. DLTS analyses detected the presence of three traps, T2, T3 and T4, which are not due to the implantation process, and a high energy trap, T5, that could be related to the surface states at the Ni/SiC interface.

Info:

Periodical:

Materials Science Forum (Volumes 483-485)

Edited by:

Roberta Nipoti, Antonella Poggi and Andrea Scorzoni

Pages:

649-652

DOI:

10.4028/www.scientific.net/MSF.483-485.649

Citation:

M. Canino et al., "n+/p Diodes Realized in SiC by Phosphorus Ion Implantation: Electrical Characterization as a Function of Temperature", Materials Science Forum, Vols. 483-485, pp. 649-652, 2005

Online since:

May 2005

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Price:

$35.00

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