New Achievements on CVD Based Methods for SiC Epitaxial Growth
The results of a new epitaxial process using an industrial 6x2” wafer reactor with the introduction of HCl during the growth have been reported. A complete reduction of silicon nucleation in the gas phase has been observed even for high silicon dilution parameters (Si/H2>0.05) and an increase of the growth rate until about 20 µm/h has been measured. No difference has been observed in terms of defects, doping uniformity (average maximum variation 8%) and thickness uniformity (average maximum variation 1.2 %) with respect to the standard process without HCl.
Dr. Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
D. Crippa et al., "New Achievements on CVD Based Methods for SiC Epitaxial Growth", Materials Science Forum, Vols. 483-485, pp. 67-72, 2005