New Achievements on CVD Based Methods for SiC Epitaxial Growth

Abstract:

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The results of a new epitaxial process using an industrial 6x2” wafer reactor with the introduction of HCl during the growth have been reported. A complete reduction of silicon nucleation in the gas phase has been observed even for high silicon dilution parameters (Si/H2>0.05) and an increase of the growth rate until about 20 µm/h has been measured. No difference has been observed in terms of defects, doping uniformity (average maximum variation 8%) and thickness uniformity (average maximum variation 1.2 %) with respect to the standard process without HCl.

Info:

Periodical:

Materials Science Forum (Volumes 483-485)

Edited by:

Roberta Nipoti, Antonella Poggi and Andrea Scorzoni

Pages:

67-72

DOI:

10.4028/www.scientific.net/MSF.483-485.67

Citation:

D. Crippa et al., "New Achievements on CVD Based Methods for SiC Epitaxial Growth", Materials Science Forum, Vols. 483-485, pp. 67-72, 2005

Online since:

May 2005

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Price:

$35.00

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