New Achievements on CVD Based Methods for SiC Epitaxial Growth

Abstract:

Article Preview

The results of a new epitaxial process using an industrial 6x2” wafer reactor with the introduction of HCl during the growth have been reported. A complete reduction of silicon nucleation in the gas phase has been observed even for high silicon dilution parameters (Si/H2>0.05) and an increase of the growth rate until about 20 µm/h has been measured. No difference has been observed in terms of defects, doping uniformity (average maximum variation 8%) and thickness uniformity (average maximum variation 1.2 %) with respect to the standard process without HCl.

Info:

Periodical:

Materials Science Forum (Volumes 483-485)

Edited by:

Dr. Roberta Nipoti, Antonella Poggi and Andrea Scorzoni

Pages:

67-72

Citation:

D. Crippa et al., "New Achievements on CVD Based Methods for SiC Epitaxial Growth", Materials Science Forum, Vols. 483-485, pp. 67-72, 2005

Online since:

May 2005

Export:

Price:

$38.00

[1] J.A. Cooper and A. Agarwal, Proceedings of the IEEE, Vol. 90, No. 6, June 2002, p.956.

[2] A. R. Powell and L. B. Rowland, Proceedings of the IEEE, Vol. 90, No. 6, June 2002, p.942.

[3] N. Karoda, K. Shibahara, W.S. Yoo, S. Nishino, H. Mastunami, Extended Abstract, 19 th Conference on Solid State Devices and Materials, Tokio, 1987, p.227.

[4] A. Veneroni, F. Omarini, M. Masi, S. Leone, M. Mauceri, G. Pistone and G. Abbondanza, This proceedings, (2004).

[5] G. Valente, C. Cavallotti, M. Masi, S. Carrà, J. Crystal Growth , 230(2001) 247.

[6] C. Cavalotti and M. Masi, Silicon Epitaxy, (Semiconductors and Semimetals, Academic Press, San Diego, 2001), cap. 2, p.51.

[7] M. Di Stanislao, G. Valente, S. Fascella, C. Spampinato, M. Masi, S. Carrà, J. Phys. IV, Pr4 (2002) p.121.

[8] M. Di Stanislao, G. Valente, S. Fascella, M. Masi, S. Carrà, J.Y. Fei, S. Yarlagadda, Electrochem. Soc. Symp. Ser., 8 (2003) p.226.