Low Density of Interface States in n-Type 4H-SiC MOS Capacitors Achieved by Nitrogen Implantation


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A surface-near Gaussian nitrogen (N) profile is implanted into n-type 4H-SiC epilayers prior to a standard oxidation process. Depending on the depth of the oxidized layer and on the implanted N concentration, the density of interface states DIT determined in corresponding 4H-SiC MOS capacitors decreases to a minimum value of approx. 1010 cm-2eV-1 in the investigated energy range (EC-(0.1 eV to 0.6 eV)), while the flat-band voltage increases to negative values due to generated fixed positive charges. A thin surface-near layer, which is highly N-doped during the chemical vapour deposition growth, leads to a reduction of DIT only close to the conduction band edge.



Materials Science Forum (Volumes 483-485)

Edited by:

Dr. Roberta Nipoti, Antonella Poggi and Andrea Scorzoni




F. Ciobanu et al., "Low Density of Interface States in n-Type 4H-SiC MOS Capacitors Achieved by Nitrogen Implantation", Materials Science Forum, Vols. 483-485, pp. 693-696, 2005

Online since:

May 2005




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