Low Density of Interface States in n-Type 4H-SiC MOS Capacitors Achieved by Nitrogen Implantation

Abstract:

Article Preview

A surface-near Gaussian nitrogen (N) profile is implanted into n-type 4H-SiC epilayers prior to a standard oxidation process. Depending on the depth of the oxidized layer and on the implanted N concentration, the density of interface states DIT determined in corresponding 4H-SiC MOS capacitors decreases to a minimum value of approx. 1010 cm-2eV-1 in the investigated energy range (EC-(0.1 eV to 0.6 eV)), while the flat-band voltage increases to negative values due to generated fixed positive charges. A thin surface-near layer, which is highly N-doped during the chemical vapour deposition growth, leads to a reduction of DIT only close to the conduction band edge.

Info:

Periodical:

Materials Science Forum (Volumes 483-485)

Edited by:

Dr. Roberta Nipoti, Antonella Poggi and Andrea Scorzoni

Pages:

693-696

DOI:

10.4028/www.scientific.net/MSF.483-485.693

Citation:

F. Ciobanu et al., "Low Density of Interface States in n-Type 4H-SiC MOS Capacitors Achieved by Nitrogen Implantation", Materials Science Forum, Vols. 483-485, pp. 693-696, 2005

Online since:

May 2005

Export:

Price:

$35.00

[1] R. Schörner, P. Friedrichs, D. Peters and D. Stephani: IEEE Electron Device Lett. Vol. 20 (1999), p.241.

[2] G. Pensl, M. Bassler, F. Ciobanu, V.V. Afanas'ev, H. Yano, T. Kimoto and H. Matsunami: Mat. Res. Soc. Symp. Proc. Vol. 640 (2001), p. H3. 2. 1.

[3] V.V. Afanas'ev and A. Stesmans: Appl. Phys. Lett. Vol. 71 (1997), p.3844.

[4] J.R. Williams, G.Y. Chung, C.C. Tin, K. McDonald, D. Farmer, R.K. Chanana, R.A. Weller, S.T. Pantelides, O.W. Holland, M.S. Das and L.C. Feldmann: Mater. Sci. Forum Vol. 389-393 (2002), p.96.

[5] V.V. Afanas'ev, A. Stesmans, F. Ciobanu, G. Pensl, K.Y. Cheong and S. Dimitriev: Appl. Phys. Lett. Vol. 82 (2003), p.568.

[6] G.Y. Chung, C.C. Tin, J.R. Williams, K. McDonald, M. Di Venta, S.T. Pantelides, L.C. Feldman and R.A. Weller: Appl. Phys. Lett. Vol. 76 (2000), p.1713.

[7] R. Schörner, P. Friedrichs, D. Peters, D. Stephani, S. Dimitrijev, and P. Jamet: Appl. Phys. Lett. Vol. 80 (2002), p.4253.

[8] E.H. Nicollian, A. Goetzberger, Bell Systems Technol. J. 46, (1966) p.1055.

[9] S. Nakayama and T. Sakai: J. Appl. Phys. Vol. 79 (1996), p.4024.

In order to see related information, you need to Login.