Effects of N2O Anneal on Channel Mobility of 4H-SiC MOSFET and Gate Oxide Reliability
The effect of N2O anneal on channel mobility of inversion-type 4H-SiC n-channel MOSFET has been systematically investigated. It is found that the mobility increases with increasing anneal temperature from 900 to 1150°C. The highest field effect mobility of 30 cm2/Vs is achieved by 1150°C anneal for 3 h, which is about 20 times higher than that for non-annealed MOSFET. In order to investigate the oxide reliability, TDDB measurement has been performed on SiO2 grown on n-type 4H-SiC. The oxide lifetime is found to be drastically improved by N2O anneal.
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
K. Fujihira et al., "Effects of N2O Anneal on Channel Mobility of 4H-SiC MOSFET and Gate Oxide Reliability", Materials Science Forum, Vols. 483-485, pp. 697-700, 2005