Characterization of Aluminium and Titanium Oxides Deposited on 4H-SiC by Atomic Layer Deposition Technique

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Aluminium oxide and titanium oxide films were deposited using the Atomic Layer Deposition method on n-type 4H SiC and p-type Si {001} substrates, with doping 6×1015cm-3 and 2×1016cm-3, respectively, and on 1.2 kV PiN 4H SiC diodes for passivation studies. The Al2O3 and SiC interface was characterised for the existence of an effective negative charge with a density of 1×1012-2×1012 cm-2. The dielectric constant of Al2O3 as determined from capacitance-voltage data was about 8.3. The maximum electric field supported by the Al2O3 film was up to 7.5 MV/cm and 8.4 MV/cm on SiC and Si, respectively.

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Periodical:

Materials Science Forum (Volumes 483-485)

Edited by:

Dr. Roberta Nipoti, Antonella Poggi and Andrea Scorzoni

Pages:

701-704

Citation:

M. Wolborski et al., "Characterization of Aluminium and Titanium Oxides Deposited on 4H-SiC by Atomic Layer Deposition Technique", Materials Science Forum, Vols. 483-485, pp. 701-704, 2005

Online since:

May 2005

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$41.00

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