Electrical Properties of Aluminium Oxide Films Grown by Atomic Layer Deposition on n-Type 4H-SiC

Abstract:

Article Preview

In this study, electrical properties of Al2O3 deposited by Atomic Layer Deposition (ALCVD) on n-type 4H-SiC were investigated. Metal-Oxide-Semiconductor (MOS) capacitors were characterized by various electrical techniques such as Capacitance-Voltage (CV), Current- Voltage (IV) and Deep Level Transient Spectroscopy (DLTS) measurements. Two different oxidants, H2O and O3, have been used for the oxide deposition. After deposition, the flat-band voltage shift is much less using O3 than H2O (~ 7V versus ~ 20V). Annealing treatment has been carried out at different temperatures in Ar atmosphere up to 700°C. Whereas the flat-band voltage shift can be reduced by annealing, the leakage current remains rather high.

Info:

Periodical:

Materials Science Forum (Volumes 483-485)

Edited by:

Dr. Roberta Nipoti, Antonella Poggi and Andrea Scorzoni

Pages:

705-708

Citation:

M. Avice et al., "Electrical Properties of Aluminium Oxide Films Grown by Atomic Layer Deposition on n-Type 4H-SiC", Materials Science Forum, Vols. 483-485, pp. 705-708, 2005

Online since:

May 2005

Keywords:

Export:

Price:

$38.00

[1] Y. C Cheng: Prog. Surf. Sci, Vol. 8 (1977), p.181.

[2] V.V. Afanas'ev, M Bassler, G. Pensl and M. J. Schulz: Phys. Stat. Sol. a, Vol. 162 (1997), p.321.

[3] M Bassler, V.V. Afanas'ev, G. Pensl and M. J. Schulz: Microelec. Eng, Vol. 48 (1999), p.257.

[4] M. D Groner, J.W. Elam, F. H Fabreguette and S. M. George: Thin Solid Films, (2002), p.186.

[5] J. B. Kim, D. R. Kwon, K. Chakrabarti and L. Chongmu: J. Appl. Phys, Vol. 92 (2002), p.6739.

[6] J. Kim, K. Chakrabarti and J. Lee: Mat. Chem. Phys, Vol. 78 (2003), p.733.

[7] K. Gao, Th. Seyller, L. Ley, F. Ciobanu and G. Pensl: Appl. Phys. Lett., Vol. 83 (2003), p.1830.

[8] E.H. Nicollian and J.R. Brews: Metal Oxide Semiconductor, Physics and Technology (Wiley Classics Library, New York 2003).

[9] V.V. Afanas'ev, M. Bassler, G. Pensl and A. Stemans: Mat. Sci. Forum, Vol. 389-393 (2002).

Fetching data from Crossref.
This may take some time to load.