Electrical Properties of Aluminium Oxide Films Grown by Atomic Layer Deposition on n-Type 4H-SiC
In this study, electrical properties of Al2O3 deposited by Atomic Layer Deposition (ALCVD) on n-type 4H-SiC were investigated. Metal-Oxide-Semiconductor (MOS) capacitors were characterized by various electrical techniques such as Capacitance-Voltage (CV), Current- Voltage (IV) and Deep Level Transient Spectroscopy (DLTS) measurements. Two different oxidants, H2O and O3, have been used for the oxide deposition. After deposition, the flat-band voltage shift is much less using O3 than H2O (~ 7V versus ~ 20V). Annealing treatment has been carried out at different temperatures in Ar atmosphere up to 700°C. Whereas the flat-band voltage shift can be reduced by annealing, the leakage current remains rather high.
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
M. Avice et al., "Electrical Properties of Aluminium Oxide Films Grown by Atomic Layer Deposition on n-Type 4H-SiC", Materials Science Forum, Vols. 483-485, pp. 705-708, 2005