4H-SiC MOSFETs Using Thermal Oxidized Ta2Si Films as High-k Gate Dielectric

Abstract:

Article Preview

Oxidized Ta2Si layers have been used as high-k dielectric layer for 4H-SiC MOSFETs. The gate insulator was grown by dry oxidation of 40nm deposited Ta2Si during 1h at 1050oC. The dielectric constant obtained from 4H-SiC MIS capacitors is ~20 with an insulator thickness of 150nm. These devices exhibit adequate subthreshold, saturation and drive characteristics. For the MOSFETs fabricated on a p-implanted and annealed region, a peak mobility up to 45cm2/Vs has been extracted. The specific on-resistance of this device is 29mW·cm2 at room temperature with VDS=0.2V and VGS=14V.

Info:

Periodical:

Materials Science Forum (Volumes 483-485)

Edited by:

Dr. Roberta Nipoti, Antonella Poggi and Andrea Scorzoni

Pages:

713-716

Citation:

A. Pérez-Tomás et al., "4H-SiC MOSFETs Using Thermal Oxidized Ta2Si Films as High-k Gate Dielectric", Materials Science Forum, Vols. 483-485, pp. 713-716, 2005

Online since:

May 2005

Export:

Price:

$38.00

[1] I. C. Kizilyalli, R. Y. S. Huang and P. K. Roy: IEEE Electron Device Lett. Vol. 19 (1998), p.423.

[2] D. Park, Y-C. King, Q. Lu, T-J. King, C. Hu, A. Kalnitsky, S-P. Tay and C-C. Cheng: IEEE Electron Device Lett. Vol. 19 (1998), p.441.

[3] A. Pérez, D. Tournier, J. Montserrat, N. Mestres, F. Sandiumenge and J. Millán: Mater. Sci. Forum Vol. 457-460 (2004), p.845.

[4] C. Chaneliere, J. L. Autran, R. A. B. Devine and B. Balland: Mater. Sci. Eng., R. Vol. 22 (1998), p.269.