Characterization of Polyimide Dielectric Layer for the Passivation of High Electric Field and High Temperature Silicon Carbide Power Devices


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Silicon carbide (SiC) is a wide bandgap semiconductor suitable for high-voltage, highpower and high-temperature applications [1]. However, and among other issues, the production of advanced SiC power devices still remains limited due to some shortcomings of the dielectric properties of the passivation layer [2]. Due to their supposed high operating temperature and dielectric strength [3], spin coated polyimide materials appear as a possible candidates for SiC device passivation and insulation purposes. As a matter of fact, they are already used in current commercial SiC devices allowing a maximum junction temperature of 175 °C. The aim of this paper is to study the ability of polyimide (PI) coatings to be used for a Tjmax up to 300 °C. Therefore, the main electrical properties (dielectric permittivity, leakage current and breakdown field) at different temperatures of a high temperature commercially available polyimide material (from HD Microsystems) in both Metal-Insulator-Semiconductor (MIS) and Metal-Insulator-Metal (MIM) structures are presented and discussed.



Materials Science Forum (Volumes 483-485)

Edited by:

Dr. Roberta Nipoti, Antonella Poggi and Andrea Scorzoni




S. Zelmat et al., "Characterization of Polyimide Dielectric Layer for the Passivation of High Electric Field and High Temperature Silicon Carbide Power Devices", Materials Science Forum, Vols. 483-485, pp. 717-720, 2005

Online since:

May 2005




[1] T.P. Chow: 10 th European Power Electronics Conference proceeding (2003), pp.1197-1209.

[2] C. I Harris, S. Savage, A. Konstantinov: Applied Surface Science 184 (2001), pp.393-398.

[3] C.P. Wong: Polymers for electronic and photonic applications. London, Academic Press. Inc (1993), pp.221-246.

[4] K. Fukunaga, T. Maeno: International Conf on Solid Dielectrics proc Vol1 (2004), pp.178-181.

[5] F. Templier, P. Ferret, L. Di Cioccio: Materials Sci forum Vols. 389-393 (2002), pp.1161-1164.

[6] M. L Locatelli, K. Isoird, S. Dinculescu, V. Bley, T. Lebey: 10th European Power Electronics Conference proceeding (2003), pp.897-905. Fig. 8: Electric field breakdown histograms at different temperatures (thickness 2µm). 123456.

[1] [2] [3] [4] [5] [6] Number of tested devices E(MV/cm) @ RT @ 80°C @ 150°C @ 250°C.

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