Characterization of Polyimide Dielectric Layer for the Passivation of High Electric Field and High Temperature Silicon Carbide Power Devices

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Silicon carbide (SiC) is a wide bandgap semiconductor suitable for high-voltage, highpower and high-temperature applications [1]. However, and among other issues, the production of advanced SiC power devices still remains limited due to some shortcomings of the dielectric properties of the passivation layer [2]. Due to their supposed high operating temperature and dielectric strength [3], spin coated polyimide materials appear as a possible candidates for SiC device passivation and insulation purposes. As a matter of fact, they are already used in current commercial SiC devices allowing a maximum junction temperature of 175 °C. The aim of this paper is to study the ability of polyimide (PI) coatings to be used for a Tjmax up to 300 °C. Therefore, the main electrical properties (dielectric permittivity, leakage current and breakdown field) at different temperatures of a high temperature commercially available polyimide material (from HD Microsystems) in both Metal-Insulator-Semiconductor (MIS) and Metal-Insulator-Metal (MIM) structures are presented and discussed.

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Periodical:

Materials Science Forum (Volumes 483-485)

Edited by:

Dr. Roberta Nipoti, Antonella Poggi and Andrea Scorzoni

Pages:

717-720

Citation:

S. Zelmat et al., "Characterization of Polyimide Dielectric Layer for the Passivation of High Electric Field and High Temperature Silicon Carbide Power Devices", Materials Science Forum, Vols. 483-485, pp. 717-720, 2005

Online since:

May 2005

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$38.00

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[1] [2] [3] [4] [5] [6] Number of tested devices E(MV/cm) @ RT @ 80°C @ 150°C @ 250°C.