Surface Preparation of 6H-SiC Substrates by Electron Beam Annealing

Abstract:

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An effect of electron beam annealing (EBA) on both surface morphology and characteristics of test Ti/n-6H-SiC contacts was investigated. It was found that the mean roughness of the n-6H-SiC surface decreased from 3.43 nm to 1.35 nm and the surface sheet resistance increased from 3.1 to 4.0 Ω/sq after EBA. The Ti/n-6H-SiC contacts formed on substrates after EBA exhibited ohmic properties, while the same contacts formed on the un-annealed samples were Schottky contacts with the barrier height of 0.63 eV and ideality factor of 1.92.

Info:

Periodical:

Materials Science Forum (Volumes 483-485)

Edited by:

Roberta Nipoti, Antonella Poggi and Andrea Scorzoni

Pages:

725-728

DOI:

10.4028/www.scientific.net/MSF.483-485.725

Citation:

O. A. Agueev et al., "Surface Preparation of 6H-SiC Substrates by Electron Beam Annealing", Materials Science Forum, Vols. 483-485, pp. 725-728, 2005

Online since:

May 2005

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Price:

$35.00

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