Surface Preparation of 6H-SiC Substrates by Electron Beam Annealing
An effect of electron beam annealing (EBA) on both surface morphology and characteristics of test Ti/n-6H-SiC contacts was investigated. It was found that the mean roughness of the n-6H-SiC surface decreased from 3.43 nm to 1.35 nm and the surface sheet resistance increased from 3.1 to 4.0 Ω/sq after EBA. The Ti/n-6H-SiC contacts formed on substrates after EBA exhibited ohmic properties, while the same contacts formed on the un-annealed samples were Schottky contacts with the barrier height of 0.63 eV and ideality factor of 1.92.
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
O. A. Agueev et al., "Surface Preparation of 6H-SiC Substrates by Electron Beam Annealing", Materials Science Forum, Vols. 483-485, pp. 725-728, 2005