Nucleation and Reaction of Ag on 4H-SiC(0001)

S. Soubatch; Ulrich Starke

doi:10.4028/www.scientific.net/MSF.483-485.741

Paper Titles

Surface Preparation of 6H-SiC Substrates by Electron Beam Annealing
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Ion-Beam Induced Modifications of Titanium Schottky Barrier on 4H-SiC
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Phase Formation at Rapid Thermal Annealing of Nickel Contacts on C-Face n-Type 4H-SiC
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Ni-Silicide Contacts to 6H-SiC: Contact Resistivity and Barrier Height on Ion Implanted n-Type and Barrier Height on p-Type Epilayer
p.737

Nucleation and Reaction of Ag on 4H-SiC(0001)
p.741

Characterization of Electrical Contacts on Polycrystalline 3C-SiC Thin Films
p.745

Effect of the Metal Composition on the Electrical and Thermal Properties of Au/Pd/Ti/Pd Contacts to p-Type SiC
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Step Structures Produced by Hydrogen Etching of Initially Step-Free (0001) 4H-SiC Mesas
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Reduction of Fluoride Species and Surface Roughness by H₂ Gas Addition in SiC Dry Etching
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HomeMaterials Science ForumMaterials Science Forum Vols. 483-485Nucleation and Reaction of Ag on 4H-SiC(0001)

Nucleation and Reaction of Ag on 4H-SiC(0001)

Abstract:

Low-energy electron diffraction (LEED), scanning tunneling microscopy (STM) and spectroscopy (STS), and Auger electron spectroscopy (AES) were used for a study of silver interaction with the (3×3) and ° × 30 ) 3 3 ( R surface phases of clean 4H-SiC(0001). The development of the surface structure and morphology after room temperature (RT) deposition and annealing was investigated. On the (3×3) phase silver forms small clusters leaving the initial reconstruction intact. At high coverages three-dimensional (3D) growth (Vollmer-Weber mode) was found. For the ° × 30 ) 3 3 ( R phase the initial structure seems more disturbed upon Ag deposition and thermally induced diffusion. Yet, no new surface phase develops. In both cases Ag can be removed from the surface by annealing, but Ag appears to be more stable on the ° × 30 ) 3 3 ( R phase according to AES.

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Materials Science Forum (Volumes 483-485)

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741-744

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.483-485.741

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Online since:

May 2005

Authors:

S. Soubatch, Ulrich Starke

Keywords:

4H-SiC, AES, Auger Electron Spectrometry, Growth, LEED, Low-Energy Electron Diffraction, Metal Film, Reactivity, Reconstruction, Scanning Tunneling Microscopy, SiC(0001), Silver, STM, Surface Structure, Thin Film

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