Forward-Bias Degradation in 4H-SiC p+nn+ Diodes: Influence of the Mesa Etching

Abstract:

Article Preview

The defects were investigated in p+nn+ 4H-SiC diodes by observing the forward-biasinduced light emission through the substrate. The spatial intensity distribution, the temporal evolution and the spectral content of the electroluminescence (EL) signal have been measured in order to detect, identify and understand the defect formation during forward-bias application. It was found that, exept from the dislocations inside the epilayers, mesa etching is a main cause for the formation of extended defects. To our knowledge, for the first time, reduction of mesa-etchinginduced defects is shown in this investigation.

Info:

Periodical:

Materials Science Forum (Volumes 483-485)

Edited by:

Roberta Nipoti, Antonella Poggi and Andrea Scorzoni

Pages:

773-776

DOI:

10.4028/www.scientific.net/MSF.483-485.773

Citation:

N. Camara et al., "Forward-Bias Degradation in 4H-SiC p+nn+ Diodes: Influence of the Mesa Etching ", Materials Science Forum, Vols. 483-485, pp. 773-776, 2005

Online since:

May 2005

Export:

Price:

$35.00

In order to see related information, you need to Login.

In order to see related information, you need to Login.