Metal Bonding in SiC Based Substrates

Abstract:

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QuaSiC TM substrates can be obtained by transferring a single crystal SiC layer onto a poly SiC substrate using the Smart Cut TM technology. The structure evolution of metal bonding (W-Si silicide) layer has been investigated by Transmission Electron Microscopy and X-ray diffraction. Results indicate that the metal bonding film is made of W5Si3. The film is discontinuous and strained. Annealing releases stress at least partially.

Info:

Periodical:

Materials Science Forum (Volumes 483-485)

Edited by:

Roberta Nipoti, Antonella Poggi and Andrea Scorzoni

Pages:

781-784

DOI:

10.4028/www.scientific.net/MSF.483-485.781

Citation:

I. Matko et al., "Metal Bonding in SiC Based Substrates", Materials Science Forum, Vols. 483-485, pp. 781-784, 2005

Online since:

May 2005

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Price:

$35.00

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