Metal Bonding in SiC Based Substrates
QuaSiC TM substrates can be obtained by transferring a single crystal SiC layer onto a poly SiC substrate using the Smart Cut TM technology. The structure evolution of metal bonding (W-Si silicide) layer has been investigated by Transmission Electron Microscopy and X-ray diffraction. Results indicate that the metal bonding film is made of W5Si3. The film is discontinuous and strained. Annealing releases stress at least partially.
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
I. Matko et al., "Metal Bonding in SiC Based Substrates", Materials Science Forum, Vols. 483-485, pp. 781-784, 2005