Metal Bonding in SiC Based Substrates


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QuaSiC TM substrates can be obtained by transferring a single crystal SiC layer onto a poly SiC substrate using the Smart Cut TM technology. The structure evolution of metal bonding (W-Si silicide) layer has been investigated by Transmission Electron Microscopy and X-ray diffraction. Results indicate that the metal bonding film is made of W5Si3. The film is discontinuous and strained. Annealing releases stress at least partially.



Materials Science Forum (Volumes 483-485)

Edited by:

Dr. Roberta Nipoti, Antonella Poggi and Andrea Scorzoni




I. Matko et al., "Metal Bonding in SiC Based Substrates", Materials Science Forum, Vols. 483-485, pp. 781-784, 2005

Online since:

May 2005




[1] QuaSiC Smart Cut substrates for SiC high power devices, Materials Science Forum Vols. 389-393 (2002) pp.151-154.

[2] Thesis L. Baud, Grenoble, August 1995. Fig. 3. TEM images from annealed films: a) plan-view of W-Si bonding layer between SiC-4H mono and SiC-3C polycrystalline, b) perpendicular cross-section of bonding layer, c) enlarged cross-section image of bonding layer.