High Field Effect Mobility in Si Face 4H-SiC MOSFET Made on Sublimation Grown Epitaxial Material

Abstract:

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We report on fabrication and characterization of n-channel Si face 4H-SiC MOSFETs made using sublimation grown epitaxial material. Transistors made on this material exhibit record-high peak field effect mobility of 208 cm2/Vs while reference transistors made on a commercial epitaxial material grown by chemical vapor deposition (CVD) show field effect mobility of 125 cm2/Vs. The mobility enhancement is attributed to better surface morphology of the sublimation grown epitaxial layer.

Info:

Periodical:

Materials Science Forum (Volumes 483-485)

Edited by:

Roberta Nipoti, Antonella Poggi and Andrea Scorzoni

Pages:

841-844

DOI:

10.4028/www.scientific.net/MSF.483-485.841

Citation:

E. Ö. Sveinbjörnsson et al., "High Field Effect Mobility in Si Face 4H-SiC MOSFET Made on Sublimation Grown Epitaxial Material", Materials Science Forum, Vols. 483-485, pp. 841-844, 2005

Online since:

May 2005

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$35.00

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