High Field Effect Mobility in Si Face 4H-SiC MOSFET Made on Sublimation Grown Epitaxial Material


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We report on fabrication and characterization of n-channel Si face 4H-SiC MOSFETs made using sublimation grown epitaxial material. Transistors made on this material exhibit record-high peak field effect mobility of 208 cm2/Vs while reference transistors made on a commercial epitaxial material grown by chemical vapor deposition (CVD) show field effect mobility of 125 cm2/Vs. The mobility enhancement is attributed to better surface morphology of the sublimation grown epitaxial layer.



Materials Science Forum (Volumes 483-485)

Edited by:

Dr. Roberta Nipoti, Antonella Poggi and Andrea Scorzoni




E. Ö. Sveinbjörnsson et al., "High Field Effect Mobility in Si Face 4H-SiC MOSFET Made on Sublimation Grown Epitaxial Material", Materials Science Forum, Vols. 483-485, pp. 841-844, 2005

Online since:

May 2005




[1] H. Ö. Ólafsson, G. Gudjonsson, P. -Å. Nilsson, E. Ö. Sveinbjörnsson, H. Zirath, T. Rödle, and R. Jos: Electron. Lett. Vol. 40 (2004), p.508.

[2] H. Ö. Ólafsson: Ph. D. thesis, Chalmers University of Technology, Göteborg, Sweden, (2004).

[3] M. Syväjärvi, R. Yakimova, M. Tuominen, A. Kakanakova Georgieva, M. F. MacMillan, A. Henry, Q. Wahab, and E. Janzén, J. Cryst. Growth 197 (1999), p.155.

DOI: https://doi.org/10.1016/s0022-0248(98)00890-2

[4] M. Syväjärvi, R. Yakimova, H. Jacobson, and E. Janzén, J. Appl. Phys. 88 (2000), p.1407.

[5] D. Alok, E. Arnold, R. Egloff, and S. Mukherjee: US Patent No. 6, 559, 068 (2003).

[6] D. Ziane, J. M. Bluet, G. Guillot, P. Godignon, J. Monserrat, R. Ciechonski, M. Syväjärvi, R. Yakimova, L. Chen, and P. Mawby: Mater. Sci. For. Vol. 457-460, (2004), p.1281.

DOI: https://doi.org/10.4028/www.scientific.net/msf.457-460.1281

[7] E. Pippel, J. Woltersdorf, H. Ö. Ólafsson, and E. Ö. Sveinbjörnsson: (unpublished).

[8] M.K. Das: Mater. Sci. For. Vol. 457-460 2004, p.1275, and references therein.