High Field Effect Mobility in Si Face 4H-SiC MOSFET Made on Sublimation Grown Epitaxial Material
We report on fabrication and characterization of n-channel Si face 4H-SiC MOSFETs made using sublimation grown epitaxial material. Transistors made on this material exhibit record-high peak field effect mobility of 208 cm2/Vs while reference transistors made on a commercial epitaxial material grown by chemical vapor deposition (CVD) show field effect mobility of 125 cm2/Vs. The mobility enhancement is attributed to better surface morphology of the sublimation grown epitaxial layer.
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
E. Ö. Sveinbjörnsson et al., "High Field Effect Mobility in Si Face 4H-SiC MOSFET Made on Sublimation Grown Epitaxial Material", Materials Science Forum, Vols. 483-485, pp. 841-844, 2005