High Power Lateral Epitaxy MESFET Technology in Silicon Carbide

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High impedance silicon carbide power RF transistors are reported, which use the technology of Lateral Epitaxy Metal-Semiconductor FET (LEMES). The LEMES transistor utilizes a heavily doped buried depletion stopper to increase output impedance and breakdown voltage and to eliminate undesirable hot-carrier trapping effects. A power density of 2-3 W/mm at 2 GHz is routinely achieved resulting in a total output power of 10W for packaged components. The value of input and output impedance is around 50 Ohms for a frequency of around 2 GHz.

Info:

Periodical:

Materials Science Forum (Volumes 483-485)

Edited by:

Dr. Roberta Nipoti, Antonella Poggi and Andrea Scorzoni

Pages:

853-856

Citation:

A. O. Konstantinov et al., "High Power Lateral Epitaxy MESFET Technology in Silicon Carbide", Materials Science Forum, Vols. 483-485, pp. 853-856, 2005

Online since:

May 2005

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$38.00

[1] A.O. Konstantinov, P. Ericsson and C.I. Harris, Materials Sci Forum, Vols. 389- 393 (2002) pp.1375-1378.

[2] R. Jonsson, S. Rudner, C. Harris, A. Konstantinov and N. Rorsman, these Conference Proceedings.

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