Hole-Like Defects in n-Channel 4H-SiC MESFETs Observed by Current Transient Spectroscopy
Conductance DLTS measurements have been performed on 4H-SiC MESFETs. A broad band due to electron emission by different levels is observed. An additional “hole-like” level with activation energy of 0.9 eV is obtained in linear regime but not in saturation regime. From the results, it is proposed that this “hole-like” signal is due to capture of electron present at a conductive SiC/SiO2 interfacial layer.
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
J. M. Bluet et al., "Hole-Like Defects in n-Channel 4H-SiC MESFETs Observed by Current Transient Spectroscopy", Materials Science Forum, Vols. 483-485, pp. 865-868, 2005