Hole-Like Defects in n-Channel 4H-SiC MESFETs Observed by Current Transient Spectroscopy

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Conductance DLTS measurements have been performed on 4H-SiC MESFETs. A broad band due to electron emission by different levels is observed. An additional “hole-like” level with activation energy of 0.9 eV is obtained in linear regime but not in saturation regime. From the results, it is proposed that this “hole-like” signal is due to capture of electron present at a conductive SiC/SiO2 interfacial layer.

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Periodical:

Materials Science Forum (Volumes 483-485)

Edited by:

Dr. Roberta Nipoti, Antonella Poggi and Andrea Scorzoni

Pages:

865-868

Citation:

J. M. Bluet et al., "Hole-Like Defects in n-Channel 4H-SiC MESFETs Observed by Current Transient Spectroscopy", Materials Science Forum, Vols. 483-485, pp. 865-868, 2005

Online since:

May 2005

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