Gamma and Proton Irradiation Effects on 4H-SiC Depletion-Mode Trench JFETs


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4H-SiC vertical depletion-mode trench JFETs were fabricated, packaged, and then irradiated with either 6.8 Mrad gamma from a 60Co source, a 9x1011 cm-2 dose of 4 MeV protons, or a 5x1013 cm-2 dose of 63 MeV protons. 4H-SiC Schottky diodes were also fabricated, packaged and exposed to the same irradiations. The trench VJFETs have a nominal blocking voltage of 600 V and a forward current rating of 2 A prior to irradiation. On-state and blocking I-V characteristics were measured after irradiation and compared to the pre-irradiation performance. Devices irradiated with 4 MeV proton and gamma radiation showed a slight increase in on resistance and a decrease in leakage current in blocking mode. Devices irradiated with 63 MeV protons, however, showed a dramatic decrease in forward current. DLTS measurements were performed, and the results of these measurements will be discussed as well.



Materials Science Forum (Volumes 483-485)

Edited by:

Dr. Roberta Nipoti, Antonella Poggi and Andrea Scorzoni




J. N. Merrett et al., "Gamma and Proton Irradiation Effects on 4H-SiC Depletion-Mode Trench JFETs", Materials Science Forum, Vols. 483-485, pp. 885-888, 2005

Online since:

May 2005




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