4H-SiC Epitaxial Growth on SiC Substrates with Various Off-Angles


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Chemical vapor deposition of 4H-SiC on (0001) substrates with various off-angles from 1o to 45o has been investigated. On large-off-angled (15o-45o) substrates, very smooth surface morphology is obtained in the wide range of C/Si ratio. The micropipe dissociation during epitaxial growth is observed on 4o-45o off-angled substrates with a low C/Si ratio. The incorporation of nitrogen was dramatically suppressed by increasing C/Si ratio irrespective of substrate’s off-angle.



Materials Science Forum (Volumes 483-485)

Edited by:

Dr. Roberta Nipoti, Antonella Poggi and Andrea Scorzoni




H. Saitoh and T. Kimoto, "4H-SiC Epitaxial Growth on SiC Substrates with Various Off-Angles", Materials Science Forum, Vols. 483-485, pp. 89-92, 2005

Online since:

May 2005




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