4H-SiC Epitaxial Growth on SiC Substrates with Various Off-Angles

Abstract:

Article Preview

Chemical vapor deposition of 4H-SiC on (0001) substrates with various off-angles from 1o to 45o has been investigated. On large-off-angled (15o-45o) substrates, very smooth surface morphology is obtained in the wide range of C/Si ratio. The micropipe dissociation during epitaxial growth is observed on 4o-45o off-angled substrates with a low C/Si ratio. The incorporation of nitrogen was dramatically suppressed by increasing C/Si ratio irrespective of substrate’s off-angle.

Info:

Periodical:

Materials Science Forum (Volumes 483-485)

Edited by:

Dr. Roberta Nipoti, Antonella Poggi and Andrea Scorzoni

Pages:

89-92

Citation:

H. Saitoh and T. Kimoto, "4H-SiC Epitaxial Growth on SiC Substrates with Various Off-Angles", Materials Science Forum, Vols. 483-485, pp. 89-92, 2005

Online since:

May 2005

Export:

Price:

$38.00

[1] M. Treu, R. Rupp, H. Brunner, F. Dahlquist and Ch. Hecht, Mater. Sci. Forum Vol. 457-460 (2004), p.981.

[2] T. Kimoto, S. Nakazawa, K. Hashimoto, and H. Matsunami: Appl. Phys. Lett., Vol. 79 (2001), p.2761.

[3] T. Kimoto, A. Itoh, H. Matsunami and T. Okano, J Appl. Phys. Vol. 81 (1997), p.3494.

[4] H. Nakagawa, S. Tanaka and I. Suemune, Phys. Rev. Lett. Vol. 91 (2003), 226107.

[5] I. Kamata, H. Tsuchida, T. Jikimoto and K. Izumi, Jpn. J. Appl. Phys. Vol. 41 (2002), p. L1137.

[6] T. Yamamoto, T. Kimoto and H. Matsunami, Mater. Sci. Forum Vol. 264-268 (1998), p.111.

[7] D. J. Larkin, P. G. Neudeck, J. A. Powell and L. G. Matus, Appl. Phys. Lett. Vol. 65 (1994), p.1659.