BVCEO Versus BVCBO for 4H and 6H Polytype SiC Bipolar Junction Transistors

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The letter presents a set of design curves that relate the open-base breakdown voltage BVCEO to the open emitter breakdown voltage BVCBO for 4H (0001 and 11-20 orientations) and 6H SiC NPN and PNP Bipolar Junction Transistors. We also present design curves pertaining to the variation of BVCEO with base doping and minority carrier diffusion length in the base for (0001) 4H-SiC BJTs for a 4x1015 cm-3 doped and 12µm thick drift layer for both NPN and PNP BJTs.

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Periodical:

Materials Science Forum (Volumes 483-485)

Edited by:

Dr. Roberta Nipoti, Antonella Poggi and Andrea Scorzoni

Pages:

893-896

Citation:

S. Balachandran et al., "BVCEO Versus BVCBO for 4H and 6H Polytype SiC Bipolar Junction Transistors", Materials Science Forum, Vols. 483-485, pp. 893-896, 2005

Online since:

May 2005

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