Growth of Large Diameter SiC Crystals by Advanced Physical Vapor Transport
Semi-insulating 6H SiC substrates, 2”, 3” and 100mm in diameter, and n+ 4H SiC substrates, 2” and 3” in diameter, are grown at II-VI using the Advanced Physical Vapor Transport (APVT) technique . The process utilizes high-purity SiC source and employs special measures aimed at the reduction of background contamination. Semi-insulating properties are achieved by precise vanadium compensation, which yields substrates with stable and uniform electrical resistivity reaching ~ 1011 Ω-cm and higher. Conductive n+ 4H SiC crystals with the spatially uniform resistivity of 0.02 W-cm are grown using nitrogen doping. Crystal quality of the substrates, their electrical properties and low temperature photoluminescence are discussed.
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
T. Anderson et al., "Growth of Large Diameter SiC Crystals by Advanced Physical Vapor Transport", Materials Science Forum, Vols. 483-485, pp. 9-12, 2005