Growth of Large Diameter SiC Crystals by Advanced Physical Vapor Transport


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Semi-insulating 6H SiC substrates, 2”, 3” and 100mm in diameter, and n+ 4H SiC substrates, 2” and 3” in diameter, are grown at II-VI using the Advanced Physical Vapor Transport (APVT) technique [1]. The process utilizes high-purity SiC source and employs special measures aimed at the reduction of background contamination. Semi-insulating properties are achieved by precise vanadium compensation, which yields substrates with stable and uniform electrical resistivity reaching ~ 1011 Ω-cm and higher. Conductive n+ 4H SiC crystals with the spatially uniform resistivity of 0.02 W-cm are grown using nitrogen doping. Crystal quality of the substrates, their electrical properties and low temperature photoluminescence are discussed.



Materials Science Forum (Volumes 483-485)

Edited by:

Dr. Roberta Nipoti, Antonella Poggi and Andrea Scorzoni




T. Anderson et al., "Growth of Large Diameter SiC Crystals by Advanced Physical Vapor Transport", Materials Science Forum, Vols. 483-485, pp. 9-12, 2005

Online since:

May 2005




[1] V. Balakrishna et al; US Patent No. 6. 056, 820 (2000). Licensed to II-VI.

[2] D. Barrett et al; US Paent No. 5, 611, 955 (1997). Licensed to II-VI.

[3] H. M. Hobgood, et al; Appl. Phys. Lett. 66 (1995), p.1364.

[4] W. J. Choyke, in The Physics and Chemistry of Carbides, Nitrides, and BoridesNATO, ASI Series E: Appl. Sci. 185, ed. R. Freer (Kluwer, Dordrecht, 1990) p.863.