Growth of Large Diameter SiC Crystals by Advanced Physical Vapor Transport

Abstract:

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Semi-insulating 6H SiC substrates, 2”, 3” and 100mm in diameter, and n+ 4H SiC substrates, 2” and 3” in diameter, are grown at II-VI using the Advanced Physical Vapor Transport (APVT) technique [1]. The process utilizes high-purity SiC source and employs special measures aimed at the reduction of background contamination. Semi-insulating properties are achieved by precise vanadium compensation, which yields substrates with stable and uniform electrical resistivity reaching ~ 1011 Ω-cm and higher. Conductive n+ 4H SiC crystals with the spatially uniform resistivity of 0.02 W-cm are grown using nitrogen doping. Crystal quality of the substrates, their electrical properties and low temperature photoluminescence are discussed.

Info:

Periodical:

Materials Science Forum (Volumes 483-485)

Edited by:

Roberta Nipoti, Antonella Poggi and Andrea Scorzoni

Pages:

9-12

DOI:

10.4028/www.scientific.net/MSF.483-485.9

Citation:

T. Anderson et al., "Growth of Large Diameter SiC Crystals by Advanced Physical Vapor Transport", Materials Science Forum, Vols. 483-485, pp. 9-12, 2005

Online since:

May 2005

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Price:

$35.00

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