A 4H-SiC BJT with an Epitaxially Regrown Extrinsic Base Layer
4H-SiC BJTs were fabricated using epitaxial regrowth instead of ion implantation to form a highly doped extrinsic base layer necessary for a good base ohmic contact. A remaining p+ regrowth spacer at the edge of the base-emitter junction is proposed to explain a low current gain of 6 for the BJTs. A breakdown voltage of 1000 V was obtained for devices with Al implanted JTE.
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
E. Danielsson et al., "A 4H-SiC BJT with an Epitaxially Regrown Extrinsic Base Layer", Materials Science Forum, Vols. 483-485, pp. 905-908, 2005