Low and High Temperature Performance of 600V 4H-SiC Epitaxial Emitter BJTs

Abstract:

Article Preview

The paper presents a study of the different aspects of the temperature dependent performance of a 4H-SiC epi-emitter Bipolar Junction Transistor particularly the low temperature performance. Some critical device physics related factors that affect the forward active performance of the device are explored and the device behavior is modeled up to 100K. We present for the first time the experimental low-temperature (down to 100K) performance of 4H-SiC epi-emitter BJTs and the determination of the temperature beyond which the current gain starts to increase with temperature. We have also corroborated these results with 2-dimensional device simulations.

Info:

Periodical:

Materials Science Forum (Volumes 483-485)

Edited by:

Dr. Roberta Nipoti, Antonella Poggi and Andrea Scorzoni

Pages:

909-912

Citation:

S. Balachandran et al., "Low and High Temperature Performance of 600V 4H-SiC Epitaxial Emitter BJTs", Materials Science Forum, Vols. 483-485, pp. 909-912, 2005

Online since:

May 2005

Export:

Price:

$38.00

[1] S.H. Ryu, A. Agarwal and J.W. Palmour, 1800V NPN Bipolar Junction Transistors in 4HSiC, IEEE Electron Device Letters, vol. 22, pp.124-126, (2001).

DOI: https://doi.org/10.1109/55.910617

[2] A.K. Agarwal, S.H. Ryu, J. Richmond, C. Capell, J.W. Palmour, Y. Tang, S. Balachandran and T.P. Chow, Large Area, 1. 3kV, 17 A, Bipolar Junction Transistors in 4H-SiC, ISPSD, pp.135-138, (2003).

DOI: https://doi.org/10.1109/ispsd.2003.1225248

[3] A.O. Konstantinov, Q. Wahab, N. Nordell, U. Lindefelt, Ionization rates and critical fields in 4H-silicon carbide, Applied Physics Letters, vol 71, n 1, pp.90-92, 7 July (1997).

DOI: https://doi.org/10.1063/1.119478

[4] X. Li, Y. Luo, L. Fursin, J. H. Zhao, M. Pan, P. Alexandrov, M. Weiner, On the temperature coefficient of 4H-SiC BJT Current gain, Solid State Electronics, vol 47, n 2, pp.233-239, (2003).

DOI: https://doi.org/10.1016/s0038-1101(02)00200-9

Fetching data from Crossref.
This may take some time to load.