Temperature Impact on High-Current 1.2kV SiC Schottky Rectifiers

Abstract:

Article Preview

SiC 600 V Schottky barrier diodes (SBD) are already available in the market and 1.2 kV have been announced. As the highest market for power devices is foreseen for blocking voltages in the range of 600 up to 1700V, we have developed 1.2kV SBDs. In this paper we report the latest results obtained on those diodes, underlining their high temperature working operation capability (up to 200°C). Forward characteristics, reverse leakage current and switching recovery time dependence on temperature have been analysed. The good thermal behaviour of the 1.2 kV SiC SBDs is compared with that of ultra-fast PN-Si diodes (RHRP8120) of the same breakdown voltage.

Info:

Periodical:

Materials Science Forum (Volumes 483-485)

Edited by:

Dr. Roberta Nipoti, Antonella Poggi and Andrea Scorzoni

Pages:

929-932

Citation:

X. Jordá et al., "Temperature Impact on High-Current 1.2kV SiC Schottky Rectifiers", Materials Science Forum, Vols. 483-485, pp. 929-932, 2005

Online since:

May 2005

Export:

Price:

$38.00

[1] A. K. Agarwal, et al., The Impact of 75 mm plus SiC High Quality Substrates and Epitaxial Layers on High Power Semiconductor Device Rating, in Proc . of the 10th European Conference on Power Electronics and Application, EPE (2003).

[2] D. Stephani, Today's and Tomorrow's Industrial Utilization of Silicon Carbide Power Devices", in Proc . of the 10th European Conference on Power Electronics and Application, EPE, (2003).

[3] P.A. Mawby et al. : The Establish Silicon Carbide Applications for Power Electronics in Europe (ESCAPEE) Project", in Proc . of the 10th European Conference on Power Electronics and Application, EPE, (2003).

[4] http: /www. rsc. rockwell. com/silicon_carbide_SiC/datasheets/Sch1200_7P5. pdf , (on-line).

[5] http: /www. cree. com/ftp/pub/CSD05120. pdf, (on-line).

[6] Lisa M. Porter and Robert F. Davis A critical review of ohmic and rectifying contacts for silicon carbide,. Materials Science and Engineering B, Vol. 34, Issues 2-3, Nov. 1995, pp.83-105.

DOI: https://doi.org/10.1016/0921-5107(95)01276-1

[7] M. Bathanagar, B.J. Baliga, H.R. Kirk, G.A. Rozgonyi, Effect of surface inhomogeneities on the electrical characteristics of SiC Schottky contacts, IEEE Trans. Electron. Devices 43 (1) (1996) pp.150-156.

DOI: https://doi.org/10.1109/16.477606

[8] M. Badila, G. Brezeanu , J. Millan , P. Godignon , V. Banu, Silicon carbide Schottky and ohmic contact process dependence, Diamond and Related Materials 11 (2002), pp.1258-1262.

DOI: https://doi.org/10.1016/s0925-9635(01)00711-7

[9] K. J. Schoen, J.M. Woodall, J.A. Cooper, M.R. Melloch, Design Condiserations and Experimental Analysis of High-Voltage SiC Schottky Barrier Rectifiers, ¸ IEEE Trans. Electron Devices 45 (7) (1998) pp.1595-1604.

DOI: https://doi.org/10.1109/16.701494

[10] F. Draghici et al. A System for Measure Reverse Recovery Time and Stored Charge at Ultrafast Power Diodes,. in Proc of the 24th International Semiconductor Conference (CAS 2001), Sinaia (Romania), Oct. 2001, pp.473-476.

DOI: https://doi.org/10.1109/smicnd.2001.967508