SiC Super Junction Power Devices: Modeling and Analysis
In this paper, we extend the super junction concept to SiC high voltage devices and further expand the SiC theoretical limit. It is shown that the super-junction concept can reduce the theoretical specific on-resistance by several times to several orders of magnitude for both silicon and SiC. The unique merit of SiC super-junction devices is that the required P and N pillars have a much smaller aspect ratio and may be easier to form than their silicon counterparts. Furthermore, SiC super-junction devices are much less sensitive to charge imbalance issue than silicon SJ devices.
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
Z.J. Shen et al., "SiC Super Junction Power Devices: Modeling and Analysis", Materials Science Forum, Vols. 483-485, pp. 957-960, 2005