SiC Super Junction Power Devices: Modeling and Analysis
In this paper, we extend the super junction concept to SiC high voltage devices and further expand the SiC theoretical limit. It is shown that the super-junction concept can reduce the theoretical specific on-resistance by several times to several orders of magnitude for both silicon and SiC. The unique merit of SiC super-junction devices is that the required P and N pillars have a much smaller aspect ratio and may be easier to form than their silicon counterparts. Furthermore, SiC super-junction devices are much less sensitive to charge imbalance issue than silicon SJ devices.
Dr. Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
Z.J. Shen et al., "SiC Super Junction Power Devices: Modeling and Analysis", Materials Science Forum, Vols. 483-485, pp. 957-960, 2005