Drift-Free, 50 A, 10 kV 4H-SiC PiN Diodes with Improved Device Yields


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The path to commericializing a 4H-SiC power PiN diode has faced many difficult challenges. In this work, we report a 50 A, 10 kV 4H-SiC PiN diode technology where good crystalline quality and high carrier lifetime of the material has enabled a high yielding process with VF as low as 3.9 V @ 100 A/cm2. Furthermore, incorporation of two independent basal plane dislocation reduction processes (LBPD 1 and LBPD 2) have produced a large number of devices that exhibit a high degree of forward voltage stability with encouraging reverse blocking capability. This results in a total yield (forward, 10 kV blocking, and drift) of >20% for 8.7 mm x 8.7 mm power PiN diode chips—the largest SiC chip reported to date.



Materials Science Forum (Volumes 483-485)

Edited by:

Dr. Roberta Nipoti, Antonella Poggi and Andrea Scorzoni




M. K. Das et al., "Drift-Free, 50 A, 10 kV 4H-SiC PiN Diodes with Improved Device Yields", Materials Science Forum, Vols. 483-485, pp. 965-968, 2005

Online since:

May 2005




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DOI: https://doi.org/10.4028/www.scientific.net/msf.389-393.1259

[3] J.J. Sumakeris, M.K. Das, H.M. Hobgood, S.G. Mueller, M.J. Paisley, J.W. Palmour, and C.H. Carter, Jr.: Mater. Sci. Forum, Vol. 457-460 (2004) p.1113.

[4] B.A. Hull, M.K. Das, J.J. Sumakeris, J. Richmond, and S. Krishnaswami: Drift Free, 10 kV, 20 A, 4H-SiC PiN Diodes (Electronic Materials Conference, South Bend, IN, June 2004).

DOI: https://doi.org/10.1142/9789812702036_0038