Investigation of Basal Plane Dislocations in the 4H-SiC Epilayers Grown on {0001} Substrates

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In this paper, we investigated the density of basal plane dislocations (BPDs) in 4H-SiC epilayers grown on (0001) and (000-1). Re-polishing of the substrate surface, in-situ H2 etching and off-cut angle were found to influence the propagation of BPDs into the epilayers. The epitaxial growth on (000-1) substrates yields a relatively low density of BPDs compared to growth on (0001). The electrical characteristics of pn diodes were also investigated, and the suppressed forward degradation and high-voltage blocking performance were obtained in the use of the (000-1) epilayers.

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Periodical:

Materials Science Forum (Volumes 483-485)

Edited by:

Dr. Roberta Nipoti, Antonella Poggi and Andrea Scorzoni

Pages:

97-100

Citation:

H. Tsuchida et al., "Investigation of Basal Plane Dislocations in the 4H-SiC Epilayers Grown on {0001} Substrates", Materials Science Forum, Vols. 483-485, pp. 97-100, 2005

Online since:

May 2005

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