Investigation of Basal Plane Dislocations in the 4H-SiC Epilayers Grown on {0001} Substrates


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In this paper, we investigated the density of basal plane dislocations (BPDs) in 4H-SiC epilayers grown on (0001) and (000-1). Re-polishing of the substrate surface, in-situ H2 etching and off-cut angle were found to influence the propagation of BPDs into the epilayers. The epitaxial growth on (000-1) substrates yields a relatively low density of BPDs compared to growth on (0001). The electrical characteristics of pn diodes were also investigated, and the suppressed forward degradation and high-voltage blocking performance were obtained in the use of the (000-1) epilayers.



Materials Science Forum (Volumes 483-485)

Edited by:

Dr. Roberta Nipoti, Antonella Poggi and Andrea Scorzoni




H. Tsuchida et al., "Investigation of Basal Plane Dislocations in the 4H-SiC Epilayers Grown on {0001} Substrates", Materials Science Forum, Vols. 483-485, pp. 97-100, 2005

Online since:

May 2005




[1] Y. Sugawara, Proceedings of ISPSD 2003 (April 14-17, Cambridge, UK, 2003), p.10.

[2] H. Lendenmann, J. P. Bergman, F. Dahlquist and C. Hallin: Mater. Sci. Forum Vol. 433-436 (2003), p.901.

[3] H. Jacobson, J. P. Bergman, C. Hallin, E. Janén, T. Tuomi and H. Lendenmann: J. Appl. Phys. Vol. 95 (2004) p.1485.

[4] S. Ha, M. Skowronski and H. Lendenmann: J. Appl. Phys. Vol. 96 (2004) p.393.

[5] J. J. Sumakeris, M. Das, H. McD. Hobgood, S. G. Müller, M. J. Paisley, S. Ha, M. Skowronski, J.W. Palmour and C.H. Carter, Jr.: Materials Science Forum Vol. 457-460 (2004), P. 1113.


[6] S. Ha, P. Mieszkowski, M. Skowronski and L. B. Rowland: J. Crystal Growth Vol. 244 (2002), p.257.

[7] K. Nakayama, Y. Sugawara, H. Tsuchida, T. Miyanagi, I. Kamata, T. Nakamura, K. Asano and R. Ishii: submitted to this conference.