Steady-State and Transient Characteristics of High-Voltage 4H-SiC Junction Diodes

Abstract:

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Forward current-voltage characteristics, reverse current recovery and post-injection voltage decay are measured for high voltage 4H-SiC p+non+-diodes. The effects of both minority carrier lifetime in diode no-base and injection coefficient of p+-emitter are investigated with respect to device performance at high injection levels.

Info:

Periodical:

Materials Science Forum (Volumes 483-485)

Edited by:

Roberta Nipoti, Antonella Poggi and Andrea Scorzoni

Pages:

973-976

DOI:

10.4028/www.scientific.net/MSF.483-485.973

Citation:

P. A. Ivanov et al., "Steady-State and Transient Characteristics of High-Voltage 4H-SiC Junction Diodes", Materials Science Forum, Vols. 483-485, pp. 973-976, 2005

Online since:

May 2005

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Price:

$35.00

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