Steady-State and Transient Characteristics of High-Voltage 4H-SiC Junction Diodes


Article Preview

Forward current-voltage characteristics, reverse current recovery and post-injection voltage decay are measured for high voltage 4H-SiC p+non+-diodes. The effects of both minority carrier lifetime in diode no-base and injection coefficient of p+-emitter are investigated with respect to device performance at high injection levels.



Materials Science Forum (Volumes 483-485)

Edited by:

Dr. Roberta Nipoti, Antonella Poggi and Andrea Scorzoni




P. A. Ivanov et al., "Steady-State and Transient Characteristics of High-Voltage 4H-SiC Junction Diodes", Materials Science Forum, Vols. 483-485, pp. 973-976, 2005

Online since:

May 2005




[1] R. Singh, D.C. Capell, K.G. Irvine, J.T. Richmond, J.W. Palmour. Electronics Letters, 38 1738 (2002).

[2] U. Zimmerman, A. Hallen, B. Breitholtz. Materials Scince Forum, 338-342 (2000), p.1323.

[3] R. Singh, K.G. Irvine, D.G. Capell, J.T. Richmond, D. Berning, A.R. Hefner, J.W. Palmour. IEEE Trans. on Electr. Dev., 49, 2308 (2002).

[4] T.T. Mnatsakanov, I.L. Rostovtsev, N.I. Philatov. Solid-State Electronics, 30, 579 (1987).

[5] H. Schlangenotto and W. Gerlach. Solid-State Electr., 15, 393 (1972).

[6] M.E. Levinshtein, T.T. Mnatsakanov, P.A. Ivanov, J.W. Palmour, S.L. Rumyantsev, R. Singh, S.N. Yurkov. IEEE Trans. on Electron Devices, 48, 1703 (2001).


[7] H. Lendenmann, J.P. Bergman, F. Dahlquist, H. Hallin. Materials Scince Forum, 433-436 (2003), p.901.