Steady-State and Transient Characteristics of High-Voltage 4H-SiC Junction Diodes
Forward current-voltage characteristics, reverse current recovery and post-injection voltage decay are measured for high voltage 4H-SiC p+non+-diodes. The effects of both minority carrier lifetime in diode no-base and injection coefficient of p+-emitter are investigated with respect to device performance at high injection levels.
Dr. Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
P. A. Ivanov et al., "Steady-State and Transient Characteristics of High-Voltage 4H-SiC Junction Diodes", Materials Science Forum, Vols. 483-485, pp. 973-976, 2005