Study of Forward Voltage Drift in Diffused SiC PiN Diodes Doped by Al or B

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The degradation of diffused SiC PIN diodes during forward-biased operation was studied by first fabricating PIN diodes by diffusion of aluminum or boron into 4H-SiC substrates with n-type 10-15 µm thick epilayers doped by nitrogen up to 5x1015cm-3. The formed diodes were subjected to degradation testing under an applied current density of 200A/cm2 at room temperature. The majority of the Al diffused diodes demonstrated a voltage drift, ΔVf, of more than 2 V, while B-doped diodes showed no significant change in forward voltage. The EBIC mode of SEM was employed to monitor nucleation and expansion of stacking faults.

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Periodical:

Materials Science Forum (Volumes 483-485)

Edited by:

Dr. Roberta Nipoti, Antonella Poggi and Andrea Scorzoni

Pages:

989-992

Citation:

S.I. Maximenko et al., "Study of Forward Voltage Drift in Diffused SiC PiN Diodes Doped by Al or B", Materials Science Forum, Vols. 483-485, pp. 989-992, 2005

Online since:

May 2005

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$38.00

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