Ultrasonic Welding of Aluminum and Silicon Wafer

Abstract:

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There are several types of welding method to join metal and ceramic. This paper gives a description of an experimental study of the ultrasonic welding of aluminum wire and silicon wafer under the conditions of the frequency of ultrasonic vibration f = 38000Hz, the applied duration T=0.2-1.5 sec, and the welding force Ps =40-140 gf. In this study, vacuum deposition was first applied to deposit surface modification aluminum on silicon wafer, then ultrasonic welding processes were investigated to join aluminum wire and modified silicon wafer. Based on the results of the microstructure observation and tensile test, it is believed that the joining ability can be improved under optimum welding condition.

Info:

Periodical:

Materials Science Forum (Volumes 505-507)

Edited by:

Wunyuh Jywe, Chieh-Li Chen, Kuang-Chao Fan, R.F. Fung, S.G. Hanson,Wen-Hsiang Hsieh, Chaug-Liang Hsu, You-Min Huang, Yunn-Lin Hwang, Gerd Jäger, Y.R. Jeng, Wenlung Li, Yunn-Shiuan Liao, Chien-Chang Lin, Zong-Ching Lin, Cheng-Kuo Sung and Ching-Huan Tzeng

Pages:

841-846

DOI:

10.4028/www.scientific.net/MSF.505-507.841

Citation:

K. M. Shu and H. R. Shih, "Ultrasonic Welding of Aluminum and Silicon Wafer", Materials Science Forum, Vols. 505-507, pp. 841-846, 2006

Online since:

January 2006

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Price:

$35.00

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