Characterization of Electrical Properties of Si Nanocrystals Embedded in an Insulating Layer by Scanning Probe Microscopy


Article Preview

Scanning probe microscope (SPM) with a conducting tip was used to electrically probe silicon nanocrystals (Si NCs) embedded in a SiO2 layer. The Si NCs were generated by the laser ablation method with compressed Si powder followed by a sharpening oxidation. The size of Si NCs is in the range of 10-50 nm, and the density is around 1011 /cm2. Using a conducting tip, the charge was injected directly into each Si NC, and the image contrast change and dC/dV curve shift caused by the trapped charges were monitored. The results were compared with those of the conventional MOS capacitor.



Materials Science Forum (Volumes 510-511)

Edited by:

Hyung Sun Kim, Yu Bao Li and Soo Wohn Lee




J. M. Kim et al., "Characterization of Electrical Properties of Si Nanocrystals Embedded in an Insulating Layer by Scanning Probe Microscopy", Materials Science Forum, Vols. 510-511, pp. 1094-1097, 2006

Online since:

March 2006




[1] S. Tiwari, F. Rana, H. Hanafi, A. Hartstein, and K. Chan, Appl. Phys. Lett. 68 (1996) 1377.

[2] L. Guo, E. Leobandung, and S. Y. Chou, Science 275 (1997) 649.

[3] Q. Ye, R. Tsu, and E. H. Nicollian, Phys. Rev. B 44 (1991) 1806.

[4] S. Tiwari, F. Rana, K. Chan, L. Shi, and H. Hanafi, Appl. Phys. Lett. 69 (1996) 1232.

[5] T. Melin, H. Diesinger, D. Deresmes, and D. Stievenard, Phys. Rev. B 69 (2004) 035321.

[6] T. Me' lin, D. Deresmes, and D. Stie'venard, Appl. Phys. Lett. 81 (2002) 5054.

[7] R. C. Barret and C. F. Quate, J. Appl. Phys. 70 (1991) 2725.

[8] J. W. Hong, S. M. Shin, C. J. Kang, Y. Kuk, and Z. G. Khim, Appl. Phys. Lett. 75 (1999) 1760.

[9] C. C. Williams, J. Slinkman, W. P. Hough, and H. K. Wickramasinghe, Appl. Phys. Lett. 55 (1989) 1662.

[10] J. J. Kopanski, J. F. Marchiando, and J. R. Lowney, J. Vac. Sci. Technol. B 14 (1996) 242.

[11] G. Neubauer, A. Erickson, C. C. Williams, J. J. Kopanski, M. Rodgers, and D. Adderton, J. Vac. Sci. Technol. B 14 (1996) 426.

[12] H. Edwards, R. McGlothin, R. S. Martin, Elisa U, M. Gribelyuk, R. Mahaffy, C. K. Shih, R. S. List and V. A. Ukraintsev, Appl. Phys. Lett. 72 (1998) 698.

[13] K. M. Mang, Y. Kuk, J. Kwon, Y. S. Kim, D. Jeon, and C. J. Kang, Europhys. Lett. 67(2004) 261.

[14] C. J. Kang, G. H. Buh, S. Lee, C. K. Kim, K. M. Mang, C. Im, and Y. Kuk, Appl. Phys. Lett. 74 (1999) 1815 Fig. 5 dC/dV-V characteristics of a Si NC with respect to the ramping rate, 20 V/s (black) and 1 V/s (gray).