Characterization of Electrical Properties of Si Nanocrystals Embedded in an Insulating Layer by Scanning Probe Microscopy

Abstract:

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Scanning probe microscope (SPM) with a conducting tip was used to electrically probe silicon nanocrystals (Si NCs) embedded in a SiO2 layer. The Si NCs were generated by the laser ablation method with compressed Si powder followed by a sharpening oxidation. The size of Si NCs is in the range of 10-50 nm, and the density is around 1011 /cm2. Using a conducting tip, the charge was injected directly into each Si NC, and the image contrast change and dC/dV curve shift caused by the trapped charges were monitored. The results were compared with those of the conventional MOS capacitor.

Info:

Periodical:

Materials Science Forum (Volumes 510-511)

Edited by:

Hyung Sun Kim, Yu Bao Li and Soo Wohn Lee

Pages:

1094-1097

DOI:

10.4028/www.scientific.net/MSF.510-511.1094

Citation:

J. M. Kim et al., "Characterization of Electrical Properties of Si Nanocrystals Embedded in an Insulating Layer by Scanning Probe Microscopy", Materials Science Forum, Vols. 510-511, pp. 1094-1097, 2006

Online since:

March 2006

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$35.00

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