Effect of the Matrix on the 1.5μm Photoluminescence of Er-Doped Silicon Quantum Dots

Abstract:

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Erbium doped nanocrystalline silicon thin films were produced by reactive magnetron r.f. sputtering. Their structural and chemical properties were studied by micro-Raman, spectroscopic ellipsometry and Rutherford backscattering spectroscopy. Films with different crystalline fraction and crystallite size were deposited by changing the deposition parameters. The impact of the composition and structure of Erbium ions environment on the 1.5 µm photoluminescence is discussed.

Info:

Periodical:

Materials Science Forum (Volumes 514-516)

Edited by:

Paula Maria Vilarinho

Pages:

1116-1120

DOI:

10.4028/www.scientific.net/MSF.514-516.1116

Citation:

M.F. Cerqueira, M. Stepikhova, M. Losurdo, T. Monteiro, M. J. Soares, M. Peres, A. Neves, E. Alves, "Effect of the Matrix on the 1.5μm Photoluminescence of Er-Doped Silicon Quantum Dots", Materials Science Forum, Vols. 514-516, pp. 1116-1120, 2006

Online since:

May 2006

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$35.00

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