Relaxor-Like Behavior of Self-Polarized Pb(Zr,Ti)O3 Thin Films

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Self-polarized Pb(Ti,Zr)O3 thin films deposited under lead enriched conditions by multitarget reactive sputtering at low substrate temperatures are characterized by tetravalent B-site occupation of excess lead. The imaginary part of the dielectric constant of such films shows a relaxor-like behavior. Evidence of a Pb2+/Pb4+ mixed valence is given by the temperature and frequency dependence of the ac conductivity. PbO volatility starts to deplete the growing film at a critical temperature of 500°C and Pb4+ formation disappears.

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Periodical:

Materials Science Forum (Volumes 514-516)

Edited by:

Paula Maria Vilarinho

Pages:

175-178

DOI:

10.4028/www.scientific.net/MSF.514-516.175

Citation:

G. Suchaneck et al., "Relaxor-Like Behavior of Self-Polarized Pb(Zr,Ti)O3 Thin Films", Materials Science Forum, Vols. 514-516, pp. 175-178, 2006

Online since:

May 2006

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$38.00

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