Relaxor-Like Behavior of Self-Polarized Pb(Zr,Ti)O3 Thin Films
Self-polarized Pb(Ti,Zr)O3 thin films deposited under lead enriched conditions by multitarget reactive sputtering at low substrate temperatures are characterized by tetravalent B-site occupation of excess lead. The imaginary part of the dielectric constant of such films shows a relaxor-like behavior. Evidence of a Pb2+/Pb4+ mixed valence is given by the temperature and frequency dependence of the ac conductivity. PbO volatility starts to deplete the growing film at a critical temperature of 500°C and Pb4+ formation disappears.
Paula Maria Vilarinho
G. Suchaneck et al., "Relaxor-Like Behavior of Self-Polarized Pb(Zr,Ti)O3 Thin Films", Materials Science Forum, Vols. 514-516, pp. 175-178, 2006