The Study of High Temperature Annealing of a-SiC:H Films

Abstract:

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A series of amorphous silicon carbide films were prepared by plasma enhanced chemical vapor deposition technique on (100) silicon wafers by using methane, silane, and hydrogen as reactive resources. A very thin (around 15 Å) gold film was evaporated on the half area of the a- SiC:H films to investigate the metal induced crystallization effect. Then the a-SiC:H films were annealed at 1100 0C for 1 hour in the nitrogen atmosphere. Fourier transform infrared spectroscopy (FTIR), X-Ray diffraction (XRD), and scanning electron microscopy (SEM) were employed to analyze the microstructure, composition and surface morphology of the films. The influences of the high temperature annealing on the microstructure of a-SiC:H film and the metal induced metallization were investigated.

Info:

Periodical:

Materials Science Forum (Volumes 514-516)

Edited by:

Paula Maria Vilarinho

Pages:

18-22

DOI:

10.4028/www.scientific.net/MSF.514-516.18

Citation:

S. Zhang et al., "The Study of High Temperature Annealing of a-SiC:H Films", Materials Science Forum, Vols. 514-516, pp. 18-22, 2006

Online since:

May 2006

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$35.00

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