Study of the High Frequency Dielectric Properties of SrBi2 Ta2O9 Ferroelectric Thin Films

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In recent years several ferroelectric thin films have been studied at microwave frequencies; lead zirconate titanate (PZT) and barium-strontium titanate (BST) has been widely investigated. However, the microwave dielectric properties of strontium-bismuth tantalate (SBT) have not yet been investigated so widely [1]. The purpose of this work is the microwave characterization of the dielectric properties of an SBT thin film biased at different DC voltages. The dielectric properties of SBT make it a good material for the production of FERAM memories. Microwave characterizations may show other properties that could promote the SBT as good candidate for capacitors to be employed also in microwave circuits (e.g. resonators and filters). In this work a study of high frequency dielectric properties has been performed and equivalent circuit model has been used to correct the measurements.

Info:

Periodical:

Materials Science Forum (Volumes 514-516)

Edited by:

Paula Maria Vilarinho

Pages:

259-263

DOI:

10.4028/www.scientific.net/MSF.514-516.259

Citation:

N. Delmonte et al., "Study of the High Frequency Dielectric Properties of SrBi2 Ta2O9 Ferroelectric Thin Films", Materials Science Forum, Vols. 514-516, pp. 259-263, 2006

Online since:

May 2006

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$35.00

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