Study of the High Frequency Dielectric Properties of SrBi2 Ta2O9 Ferroelectric Thin Films


Article Preview

In recent years several ferroelectric thin films have been studied at microwave frequencies; lead zirconate titanate (PZT) and barium-strontium titanate (BST) has been widely investigated. However, the microwave dielectric properties of strontium-bismuth tantalate (SBT) have not yet been investigated so widely [1]. The purpose of this work is the microwave characterization of the dielectric properties of an SBT thin film biased at different DC voltages. The dielectric properties of SBT make it a good material for the production of FERAM memories. Microwave characterizations may show other properties that could promote the SBT as good candidate for capacitors to be employed also in microwave circuits (e.g. resonators and filters). In this work a study of high frequency dielectric properties has been performed and equivalent circuit model has been used to correct the measurements.



Materials Science Forum (Volumes 514-516)

Edited by:

Paula Maria Vilarinho




N. Delmonte et al., "Study of the High Frequency Dielectric Properties of SrBi2 Ta2O9 Ferroelectric Thin Films", Materials Science Forum, Vols. 514-516, pp. 259-263, 2006

Online since:

May 2006




[1] Y. Wu, M.J. Forbess, S. Seraji, S.J. Limmer, T.P. Chou, G. Cao, Impedance study of SrBi2Ta2O9 and SrBi2(Ta0. 9V0. 1)O9 ferroelectrics, Material Science and Engineering, vol. B86 (2001), pp.70-78.


[2] Z. Ma, A.J. Becker, P. Polakos, H. Huggins, J. Pastalan, H. Wu, K. Watts, Y.H. Wong, P. Mankiewich, RF Measurement Technique for Characterizing Thin Dielectric Films, IEEE Trans. on Electron Devices, vol. 45, no. 8, August (1998).


[3] T.G. Kim, J. Oh, Y. Kim, T. Moon, K. Sun Hong, B. Park, Crystallinity Dependence of Microwave Dielectric Properties in (Ba, Sr)TiO3 Thin Films, Jpn. Journal of Applied Physics, Vol. 42 (2003), pp.1315-1319.


[4] K. Kotani, M. Misra, I. Kawayama, M. Tonouchi, Time- domain Terahertz Spectroscopy of Strontium Bismuth Tantalate Thin Films, Mat. Res. Soc. Symp. Proc., Vol. 784 (2004).


[5] D.C. Dube, J. Baborowski, P. Muralt, N. Setter, The effect of bottom electrode on the performance of thin film based capacitors in the gigahertz region, Applied Physics Letters, Vol. 74, N. 23 (1999), pp.3546-3548.


[6] W. Chang, C.M. Gilmore, Influence of strain on microwave dielectric properties of (Ba, Sr)TiO3 thin films, Journal of Applied Physics, Vol. 87, N. 6 (2000), pp.3044-3049.


[7] Y. Kim, J. Oh, Y. Kim, T.G. Kim, B. Park, Influence of the Microstructures on the Dielectric Properties of ZrTiO4 Thin Films at Microwave-Frequency Range, Jpn. Journal of Applied Physics, Vol. 40 (2001), pp.4599-4603.


[8] B.E. Watts, F. Leccabue, S. Guerri, M. Severi, M. Fanciulli, S. Ferrari, G. Tallarida, C. Morandi, A comparison of Ti/Pt and TiN/Pt electrodes used with ferroelectric SrBi2Ta2O9 films, Thin solid films, Elsevier, Vol. 406 (2002), pp.23-29.


Fetching data from Crossref.
This may take some time to load.