Ferromagnetism and Ferromagnetic Resonance in Mn Implanted Si and GaAs

Abstract:

Article Preview

Ferromagnetism persisting above 375 K and anisotropic ferromagnetic resonance (FMR) spectra have been detected for the first time in Si co-implanted with Mn and As and annealed under appropriate conditions. For comparison, semi-insulating GaAs samples have been implanted with the same ions and subsequently annealed. They also exhibit ferromagnetism with a Curie temperature well in excess of 375 K. High-resolution transmission electron microscopy (TEM) performed on the samples with the best magnetic characteristics has shown the presence of nanoclusters due to the segregation of the implanted species in both Si and GaAs. The angular dependence of the FMR spectra also reveals the existence of magnetic clusters with the hard magnetization axis aligned along the four equivalent <111> crystal axes. The spectra are very similar in Si and GaAs, indicating that the clusters in both materials probably consist of hexagonal MnAs.

Info:

Periodical:

Materials Science Forum (Volumes 514-516)

Edited by:

Paula Maria Vilarinho

Pages:

280-283

DOI:

10.4028/www.scientific.net/MSF.514-516.280

Citation:

N. A. Sobolev et al., "Ferromagnetism and Ferromagnetic Resonance in Mn Implanted Si and GaAs", Materials Science Forum, Vols. 514-516, pp. 280-283, 2006

Online since:

May 2006

Export:

Price:

$35.00

[1] P.J. Wellmann, J.M. Garcia, J. -L. Feng, and P.M. Petroff. Appl. Phys. Lett. 71 (1997) 2532.

[2] De Boeck, R. Osterholt, A. Van Esch, et al. Appl. Phys. Lett. 68 (1996) 2744.

[3] K. Ono, J. Okabayashi, M. Mizuguchi, et al. J. Appl. Phys. 91 (2002) 8088.

[4] F.M. Zhang, Y. Zeng, J. Gao, et al. J. Magnetism and Magnetic Materials 282 (2004) 216.

[5] L. Liu, et. al., J. Crystal Growth 273 (2005) 458.

[6] M. Bolduc, C. Awo-Affouda, A. Stollenwerk, et al. Phys. Rev. B 71 (2005) 033302.

[7] A. Serres, G. Benassayag, M. Respaud, et al. Materials Science and Engineering B 101 (2003) 119.

[8] S. J. Potashnik, K. C. Ku, R. Mahendiran, et al., Physical Review B 66 (2002) 12408.

[9] M. Farle. Rep. Prog. Phys. 61 (1998) 755.

[10] Th. Hartmann, M. Lampalzer, et. al., Physica E 13 (2002) 572.

[11] M. Oestreich, M. Bender, J. Hübner, et al. Semicond. Sci. Technol. 17 (2002) 285.

In order to see related information, you need to Login.