Synthesis of BiFeO3 Ceramic Targets and Thin Film Deposition by Laser Ablation


Article Preview

A dense ceramic target of BiFeO3 was synthesized by the urea combustion method. X-ray diffraction indicates that this target is composed of a mixture of phases, the main one is BiFeO3, but Bi46Fe2O72 and Bi2Fe4O9 are also present in small amounts. The BiFeO3 target was used for depositing thin films on Pt/Ti/SiO2/Si substrates by the laser ablation technique. The depositions were made in oxygen atmosphere at pressures in the range between 5x10-3 and 2x10-2mbar, using a KrF laser. The substrate temperatures were 450 or 500°C and the laser energy, the frequency and the distance between the target and the substrate were kept constant at 125mJ, 10Hz and 4cm, respectively. After a deposition time of 30minutes the thickness of the films was approximately 400nm. Some of the films were heat-treated in situ, in 100mbar O2 for 30minutes, at the same temperatures used for deposition. X-ray diffraction results show the BiFeO3 phase, as well as some Bi46Fe2O72 and Bi2Fe4O9. The films were crystallized without any preferential orientation, but the ones made at 2x10-2mbar and 450°C were partially amorphous. For measuring the ferroelectric hysteresis loops, either Al top electrodes were deposited by thermal evaporation or Pt, by sputtering. The distorted shapes of the hysteresis loops obtained indicated that the films exhibit weak ferroelectric properties and high leakage current values.



Materials Science Forum (Volumes 514-516)

Edited by:

Paula Maria Vilarinho




C. C. Mardare et al., "Synthesis of BiFeO3 Ceramic Targets and Thin Film Deposition by Laser Ablation", Materials Science Forum, Vols. 514-516, pp. 328-332, 2006

Online since:

May 2006




[1] J. Wang, J.B. Neaton, H. Zheng, V. Nagarajan, S.B. Ogale, B. Liu, D. Viehland, V. Vaithyanathan, D.G. Schlom, U.V. Waghmare, N.A. Spaldin, K.M. Rabe, M. Wuttig and R. Ramesh: Science Vol. 299 (2003), p.1719.

[2] G.A. Smolenskii, V.M. Yudin, E.S. Sher and Yu.E. Stolypin: Sov. Phys. JEPT Vol. 16 (1963), p.622.

[3] Yu. E. Roginskaya, Yu. Ya. Tomashpol'skii, Yu.N. Venevtsev, V.M. Petrov and G.S. Zhdanov: Sov. Phys. JETP Vol. 23 (1966), p.47.

[4] I.G. Ismailzade: Phys. Stat. Sol. B Vol. 46 (1971), p. K39.

[5] M.M. Kumar, V.R. Palkar, K. Srinivas, S.V. Suryanarayana: Appl. Phys. Lett. Vol. 76 (2000) p.2764.

[6] J. -R. Cheng, N. Li and E. Cross: J. Appl. Phys. Vol. 94 (2003), p.5153.

[7] V.R. Palkar, J. John and R. Pinto: Appl. Phys. Lett. Vol. 80 (2002), p.1628.

[8] K.Y. Yun, D. Ricinschi, T. Kanashima, M. Noda and M. Okuyama: Japn. J. Appl. Phys. Vol. 43 (2004), p. L647.

[9] C. Vázques-Vázquez, M.C. Blanco, M.A. López-Quintela, R.D. Sánchez, J. Rivas, S.B. Oseroff: J. Mater. Chem. Vol. 8 (1998), p.991.