Structural and Optical Characterization of Light Emitting InGaN/GaN Epitaxial Layers

Abstract:

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This paper concerns the structural and optical properties of the group III-V semiconductor alloy, indium gallium nitride (InGaN). We focus on the reasons of interest to study InGaN. Recent advances regarding the basic understanding (ex. accurate composition determination) and some yet unclear issues (ex. phase separation) regarding this material system, are also briefly discussed. Illustrative results on the light emitting and structural properties are presented.

Info:

Periodical:

Materials Science Forum (Volumes 514-516)

Edited by:

Paula Maria Vilarinho

Pages:

38-42

DOI:

10.4028/www.scientific.net/MSF.514-516.38

Citation:

S. Pereira, M.R. Correia, E. Alves, "Structural and Optical Characterization of Light Emitting InGaN/GaN Epitaxial Layers", Materials Science Forum, Vols. 514-516, pp. 38-42, 2006

Online since:

May 2006

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Price:

$35.00

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