Effect of Thermal Treatment for Pd and PdSi Schottky Contacts on p-GaN


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Pd Schottky diode exhibited stable rectifying behavior up to 500°C for 35 minutes in sequential annealing; with the Schottky barrier heights (SBHs), ΦB (I-V) of 0.6-0.7eV with the leakage current (LC) of 20 A at -5V. With the same range of SBHs, PdSi diodes were stable up to 500°C for 5 minutes with the LC of 0.182mA at -5V. The electrical characteristics obtained in this study are also compared with those obtained for Pd and PdSi Schottky diodes on p-GaN.



Edited by:

A.K. Arof and S.A. Hashim Ali




C.K. Tan et al., "Effect of Thermal Treatment for Pd and PdSi Schottky Contacts on p-GaN", Materials Science Forum, Vol. 517, pp. 242-246, 2006

Online since:

June 2006




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