Effect of Thermal Treatment for Pd and PdSi Schottky Contacts on p-GaN

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Pd Schottky diode exhibited stable rectifying behavior up to 500°C for 35 minutes in sequential annealing; with the Schottky barrier heights (SBHs), ΦB (I-V) of 0.6-0.7eV with the leakage current (LC) of 20 A at -5V. With the same range of SBHs, PdSi diodes were stable up to 500°C for 5 minutes with the LC of 0.182mA at -5V. The electrical characteristics obtained in this study are also compared with those obtained for Pd and PdSi Schottky diodes on p-GaN.

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Periodical:

Edited by:

A.K. Arof and S.A. Hashim Ali

Pages:

242-246

DOI:

10.4028/www.scientific.net/MSF.517.242

Citation:

C.K. Tan et al., "Effect of Thermal Treatment for Pd and PdSi Schottky Contacts on p-GaN", Materials Science Forum, Vol. 517, pp. 242-246, 2006

Online since:

June 2006

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$35.00

[1] Yuji Koyama, Tamotsu Hashizume, Hideki hasegawa, Solid-State Electronics, Vol. 43 (1999), p.1483.

DOI: 10.1016/s0038-1101(99)00093-3

[2] Q. Z. Liu and S. S. Lau, Solid-State Electronics, Vol. 42 (1998), p.677.

[3] C. W. Wang, J. Y. Liao, C. L. Chen, W. K. Lin, Y. K. Su, M. Yokoyama, Journal of vac. Sci. Tech., Vol. 28 (1999), p.341.

[4] Pal S, Sugino T. Appl Surf Sci., Vol. 161 (2000), p.263.

[5] S. J. Pearton, F. Ren, B. P. Gilla and C. R. Abernathy, Advanced processing of Group IIINitrides, (2004).

[6] I. Adesida, A. C. Schmitz, A. T. Ping, and M. A. Khan, presented at the Spring MRS Meeting, San Francisco. C. A. April, (1996).

[7] S. M. Sze, Physics of Semiconductor Devices, 2 nd edition, (John Wiley & Sons, New York, 1989).

[8] D. Donoval, V. Kulikov, P. Beňo, J. Racko, ASDAM (2002).

[9] J. -L. Lee and J. K. Kim, J. Electrochem. Soc., Vol. 147 (2000), p.2297.

[10] J. H. Werner, A. F. J. Levi, R. T. Tung, M. Anzlower and M. Pinto, Phys. Rev. Lett., Vol. 60 (1988), p.53.

[11] E. H. Rhoderick and R. H. Williams, Metal-Semiconductor Contacts 2 nd edition (Clarendon Press, Oxford, 1988), ch. 3, p.118.

[12] G. L. Chen, F. C. Chang, K.C. Shen, J. Ou, W. H. Chen, M. C. Lee, M. J. Jou, C. N. Huang, Applied Physics letters, Vol. 80 (2002), p.4.

[13] C. I. Wu, and A. Kahn, J. Vac. Sci. Technol. Vol. B16 (1998), p.2218.

[14] K. N. Lee, X. A. Cao, C. R. Abernathy, S. J. Pearton, A. P. Zhang, F. Ren, R. Hickman, J. M. Van Hove, solid state electronics, Vol. 44 (2000), p.1203.

[15] N. Miura, T. Nanjo, M. Suita, T. Oishi, Y. Abe, T. Ozeki, H. Ishikawa, T. Egawa, T. Jimbo, Solid-State Electronics, Vol. 48 (2004), p.689.

DOI: 10.1016/j.sse.2003.07.006

[16] K. Suzue, S. N. Mohammad, Z. F. Fan, W. Kim, O. Aktas, A. E. Botchkarev, H. Morkov, J. Appl. Phys., Vol. 80 (1996), p.4467.

[17] Q. Z. Liu, L. S. Yu, S. S. Lau, J. M. Redwing, N. R. Perkins and T. F. Kuech, Appl. Phys. Lett., Vol. 70 (1997), p.1275.

[18] Q. Z. Liu, L. S. Yu, F. Deng, S. S. Lau, J. M. Redwing, Journal of Appl. Phys., Vol. 84 (1998), p.881.

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