Effect of Thermal Treatment for Pd and PdSi Schottky Contacts on p-GaN
Pd Schottky diode exhibited stable rectifying behavior up to 500°C for 35 minutes in sequential annealing; with the Schottky barrier heights (SBHs), ΦB (I-V) of 0.6-0.7eV with the leakage current (LC) of 20 A at -5V. With the same range of SBHs, PdSi diodes were stable up to 500°C for 5 minutes with the LC of 0.182mA at -5V. The electrical characteristics obtained in this study are also compared with those obtained for Pd and PdSi Schottky diodes on p-GaN.
A.K. Arof and S.A. Hashim Ali
C.K. Tan et al., "Effect of Thermal Treatment for Pd and PdSi Schottky Contacts on p-GaN", Materials Science Forum, Vol. 517, pp. 242-246, 2006