The Study of Thermal Treatment on Electrical Properties at Cr/p-GaN

Abstract:

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The barrier height of as-deposited Cr contacts was found to be ΦB= 0.87eV with the ideality of η=1.51 and remained almost unchanged after further annealing at 500 oC for 5 minutes. The barrier height of diodes were increased drastically after annealed at 600 oC where ΦB=1.01eV with η=1.69. Upon annealing at 700 oC for 5 minutes, the ΦB decreased to 0.61eV and the Cr diodes were degraded for higher temperature in this annealing duration. The ΦB remained in 0.80- 0.90eV respectively at 800 oC for 2 minutes and 900-1000 oC for 1 minute.

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Periodical:

Edited by:

A.K. Arof and S.A. Hashim Ali

Pages:

247-251

DOI:

10.4028/www.scientific.net/MSF.517.247

Citation:

C.K. Tan, A. A. Aziz, H. Zainuriah, F.K. Yam, C.W. Lim, A.Y. Hudeish, "The Study of Thermal Treatment on Electrical Properties at Cr/p-GaN", Materials Science Forum, Vol. 517, pp. 247-251, 2006

Online since:

June 2006

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$35.00

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