The Study of Thermal Treatment on Electrical Properties at Cr/p-GaN
The barrier height of as-deposited Cr contacts was found to be ΦB= 0.87eV with the ideality of η=1.51 and remained almost unchanged after further annealing at 500 oC for 5 minutes. The barrier height of diodes were increased drastically after annealed at 600 oC where ΦB=1.01eV with η=1.69. Upon annealing at 700 oC for 5 minutes, the ΦB decreased to 0.61eV and the Cr diodes were degraded for higher temperature in this annealing duration. The ΦB remained in 0.80- 0.90eV respectively at 800 oC for 2 minutes and 900-1000 oC for 1 minute.
A.K. Arof and S.A. Hashim Ali
C.K. Tan, A. A. Aziz, H. Zainuriah, F.K. Yam, C.W. Lim, A.Y. Hudeish, "The Study of Thermal Treatment on Electrical Properties at Cr/p-GaN", Materials Science Forum, Vol. 517, pp. 247-251, 2006