Effects of Indium Depositions on Porous Silicon Nanostructure (PSN)


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The effects of Indium doped on Porous Silicon Nanostructure (PSN) have been studied. The Electroluminescence studies on Indium-doped porous silicon nanostructure (In:PSN) are presented. The main objective of this paper is study the EL effects of Indium doping on PSN. Porous silicon nanostructure layers have been formed by anodically etching unpolished p-type Si [100] wafer with surface resistivity of 1-10 ohm cm-1 in Hydroflouric (HF) solution at 1:1 ratio of Ethanol. Indium (In) was doped on PSN using cathodic electrodeposition composed of InCl3 and ethanol electrolythe. A diode structure has been fabricated comprising semi-transparent Au/In:PSN/p-Si substrate/Al ohmic contact electrode to observe the EL spectra. The In:PSN device shows increasing on EL and PL Intensity as well as blue-shift EL and PL spectrum is observed. Possible reasons for the enhancement will be discussed. Technological application of PSN as a light emitter would have significant impact on numerous technologies such as display panels or integrated circuits with optoelectronic devices (IO) on board and sensors.



Edited by:

A.K. Arof and S.A. Hashim Ali




S. Abdullah et al., "Effects of Indium Depositions on Porous Silicon Nanostructure (PSN)", Materials Science Forum, Vol. 517, pp. 267-271, 2006

Online since:

June 2006




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