Effects of Indium Depositions on Porous Silicon Nanostructure (PSN)

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The effects of Indium doped on Porous Silicon Nanostructure (PSN) have been studied. The Electroluminescence studies on Indium-doped porous silicon nanostructure (In:PSN) are presented. The main objective of this paper is study the EL effects of Indium doping on PSN. Porous silicon nanostructure layers have been formed by anodically etching unpolished p-type Si [100] wafer with surface resistivity of 1-10 ohm cm-1 in Hydroflouric (HF) solution at 1:1 ratio of Ethanol. Indium (In) was doped on PSN using cathodic electrodeposition composed of InCl3 and ethanol electrolythe. A diode structure has been fabricated comprising semi-transparent Au/In:PSN/p-Si substrate/Al ohmic contact electrode to observe the EL spectra. The In:PSN device shows increasing on EL and PL Intensity as well as blue-shift EL and PL spectrum is observed. Possible reasons for the enhancement will be discussed. Technological application of PSN as a light emitter would have significant impact on numerous technologies such as display panels or integrated circuits with optoelectronic devices (IO) on board and sensors.

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Periodical:

Edited by:

A.K. Arof and S.A. Hashim Ali

Pages:

267-271

DOI:

10.4028/www.scientific.net/MSF.517.267

Citation:

S. Abdullah et al., "Effects of Indium Depositions on Porous Silicon Nanostructure (PSN)", Materials Science Forum, Vol. 517, pp. 267-271, 2006

Online since:

June 2006

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$35.00

[1] L.T. Canham, Appl. Phys. Lett., Vol 57, (1990) p.1046.

[2] Yen-Ann Chen, et. al, Jpn.J. Appl. Phys., Vol 36, (2003) p.1574.

[3] F. Koch et al., Mat. Res. Soc. Sym. Proc., Vol 283, (1993) p.197.

[4] M. Brandt, H.D. Fucs, M. Stutsmann, J. Weber and M.E. Cardona, Solid State Commun., Vol 81, (2001) p.307.

[5] A. Uhlir, Bell Sys. Tech. J. Appl. Phys., Vol 27, (1957) p.544.

[6] M. Ben. Chorin , F. Moller, and F. Koch, J. Lumin., Vol 57, (1993) p.159.

[7] M. Jeske et al., Thin Solid Film, Vol 255, (1995) p.63.

[8] S. Lazarouk et al., Appl. Phys. Lett., Vol 68, (2004) p.1646.

[9] Tsybeskov, S.P. Duttagupta, K.D. Hirschman and P.M. Fauchet, J.L. Lum., Vol 70, (1996) p.49.

[10] P.M. Fauchet, J. Lumin., Vol 70, (1996) p.294.

[11] P. Steiner, F. Kozlowski and W. Lang, Thin Solid Film, Vol 255, (2003) p.49.

[12] A. G. Cullins, L.T. Canham and P.D. J. Calcott, J. Appl. Phys., Vol 82, (2002) p.3.

[13] T. Ito et al., Jpn. J. Appl. Phys., Vol 34 , (2000) p. L649.

[14] F. Kozlowski, P. Steiner and W. Lang, J. Lumin., Vol 57, (1993) p. 163L.

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