Annealing Effects on GaN/ZnO/Si Structures Prepared by RF Magnetron Sputtering

Abstract:

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This study shows the effect of thermal annealing on GaN/ZnO/Si structures prepared by rf magnetron sputtering. Thermal annealing tended to induce a different crystalline orientation from the c-axis orientation observed with as-deposited films. The sample annealed at 900 oC under excitation at 325 nm showed two emission bands centered at approximately 380 and 550 nm.

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Periodical:

Edited by:

Dragan P. Uskokovic, Slobodan K. Milonjic and Dejan I. Rakovic

Pages:

137-142

DOI:

10.4028/www.scientific.net/MSF.518.137

Citation:

H. W. Kim et al., "Annealing Effects on GaN/ZnO/Si Structures Prepared by RF Magnetron Sputtering", Materials Science Forum, Vol. 518, pp. 137-142, 2006

Online since:

July 2006

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$35.00

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