Characteristics of Indium Oxide Rod-Like Structures Synthesized on Sapphire Substrates

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In2O3 materials consisting of dense arrays of vertically aligned rod-like structures were deposited on sapphire substrates by thermal chemical vapor deposition (CVD) using triethylindium (TEI) and oxygen as precursors at a substrate temperature of 350 oC. The rod-like structure with a triangular cross section had a cubic structure, exhibiting preferred crystallographic orientation in the [111] direction. The photoluminescence spectra of In2O3 structures under excitation at 325 nm revealed a visible emission.

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Periodical:

Edited by:

Dragan P. Uskokovic, Slobodan K. Milonjic and Dejan I. Rakovic

Pages:

143-148

DOI:

10.4028/www.scientific.net/MSF.518.143

Citation:

H. W. Kim et al., "Characteristics of Indium Oxide Rod-Like Structures Synthesized on Sapphire Substrates", Materials Science Forum, Vol. 518, pp. 143-148, 2006

Online since:

July 2006

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$35.00

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