Analysis of SiO2 Thin Film Deposited by Reactive Sputtering

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SiO2 layers were deposited by reactive d.c ion sputtering (using 1keV Ar+ ion gun) from a high purity silicon target in an oxygen ambient. The base pressure in the deposition chamber was 4.7·10-9mbar, and the substrate temperature was held at 550 °C. The argon partial pressure during ion gun operation was 1·10-3mbar. Structural characterization of the films was performed by Rutherford backscattering spectrometry (RBS analysis), electron microprobe analysis, X-ray diffraction (XRD analysis) and Raman spectroscopy. Reactive sputtering proved to be efficient for the deposition of silica at an oxygen partial pressure of 2·10-4mbar and an electrical current on the target of 5.5mA.

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Periodical:

Edited by:

Dragan P. Uskokovic, Slobodan K. Milonjic and Dejan I. Rakovic

Pages:

149-154

DOI:

10.4028/www.scientific.net/MSF.518.149

Citation:

I. Radović et al., "Analysis of SiO2 Thin Film Deposited by Reactive Sputtering", Materials Science Forum, Vol. 518, pp. 149-154, 2006

Online since:

July 2006

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$35.00

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