Analysis of SiO2 Thin Film Deposited by Reactive Sputtering
SiO2 layers were deposited by reactive d.c ion sputtering (using 1keV Ar+ ion gun) from a high purity silicon target in an oxygen ambient. The base pressure in the deposition chamber was 4.7·10-9mbar, and the substrate temperature was held at 550 °C. The argon partial pressure during ion gun operation was 1·10-3mbar. Structural characterization of the films was performed by Rutherford backscattering spectrometry (RBS analysis), electron microprobe analysis, X-ray diffraction (XRD analysis) and Raman spectroscopy. Reactive sputtering proved to be efficient for the deposition of silica at an oxygen partial pressure of 2·10-4mbar and an electrical current on the target of 5.5mA.
Dragan P. Uskokovic, Slobodan K. Milonjic and Dejan I. Rakovic
I. Radović, Y. Serruys, Y. Limoge, O. Jaoul, N.Ž. Romčević, S. Poissonnet, N. Bibić, "Analysis of SiO2 Thin Film Deposited by Reactive Sputtering", Materials Science Forum, Vol. 518, pp. 149-154, 2006