Radiological Characterization of Semiconductor Materials in Field Effect Transistor Dosimeter by Monte Carlo Method

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The use of semiconductor materials in radiation processing, radiation therapy and diagnostics, and detection of cosmic radiation motivated development of numerical methods for its radiological characterization. This paper presents the application of the Monte Carlo method using the FOTELP-2K4 code for radiological characterization of Metal Oxide Semiconductor Field Effect Transistor (MOSFET) dosimeter. The advantages of MOSFET dosimeters include small size, immediate readout, and ease of use for a wide photon energy range. In order to determine the dosimeter response accurately, distribution of the absorbed dose in the MOSFET structure has been investigated. Our results show that the absorbed dose distribution calculated by the presented simulation model compares well with the published data.

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Periodical:

Edited by:

Dragan P. Uskokovic, Slobodan K. Milonjic and Dejan I. Rakovic

Pages:

361-366

DOI:

10.4028/www.scientific.net/MSF.518.361

Citation:

S. J. Stanković et al., "Radiological Characterization of Semiconductor Materials in Field Effect Transistor Dosimeter by Monte Carlo Method", Materials Science Forum, Vol. 518, pp. 361-366, 2006

Online since:

July 2006

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$35.00

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