Photoacoustic and Optical Properties of Zinc-Stannate Thin Films


Article Preview

Thin films of single-phase zinc-stannate (Zn2SnO4) were grown by rf magnetron sputtering onto glass substrates. Transmission in the visible range was measured allowing determination of the energy gap and thickness of analyzed thin film samples using interference fringes. The photoacoustic phase and amplitude spectra of all samples were measured as a function of the laser beam modulating frequency using a transmission detection configuration. Fitting of experimental data enabled calculation of thermal diffusivity, the coefficient of minority carrier diffusion, their mobility and lifetime.



Edited by:

Dragan P. Uskokovic, Slobodan K. Milonjic and Dejan I. Rakovic




T. Ivetić et al., "Photoacoustic and Optical Properties of Zinc-Stannate Thin Films ", Materials Science Forum, Vol. 518, pp. 465-470, 2006

Online since:

July 2006




[1] D.S. Ginley and C. Bright: MRS Bull. Vol. 25 (2000), p.15.

[2] C.G. Granqvist and A. Hultaker: Thin Solid Films Vol. 411 (2002), p.1.

[3] T.J. Coutts, D.L. Young, X. Li, W.P. Mulligan and X. Wu: J. Vac. Sci. Tech. A Vol. 18 (2000), p.2646.

[4] O. Kluth, C. Agashe, J. Hupkes, J. Muller and B. Rech: Proc. of the 3 rd World Conference on Photovoltaic Energy Conversion, Vol. B (2003), p.1800.

[5] J.H. Yu and G.M. Choi: Journal of Electroceramics Vol. 8 (2002), p.249.

[6] I. Stambolova K. Konstantinov, D. Kovacheva, P. Peshev and T. Donchev: J. Solid State Chem. Vol. 128 (1997), p.305.

[7] J.X. Wang, S.S. Xie, H.J. Yuan, X.Q. Dan, D.F. Liu, Y. Gao, Z.P. Zhou, L. Song, L.F. Liu, X.W. Zhao, X.Y. Dou, W.Y. Zhou and G. Wang: Solid State Commun. Vol. 131 (2004), p.435.

[8] Y. Li and X.L. Ma: Phys. Stat. Sol. Vol. 202 (2005), p.435.

[9] X. Wu, S. Asher, D.H. Levi, D.E. King, Y. Yan, T.A. Gessert and P. Sheldon: J. Appl. Phys. Vol. 89 (2001), p.4564.

[10] D.L. Young, T.J. Coutts and D.L. Williamson: Mat. Res. Soc. Symp. Proc. V666 (2001), p. F381.

[11] D.L. Young, H. Montinho, Y. Yan and T.J. Coutts: J. Appl. Phys. Vol. 92 (2002), p.310.

[12] D.M. Todorović and P.M. Nikolić: Opt. Eng. 36 (1997), p.432.

[13] S. Venkatachalam, D. Mangalaraj, Sa.K. Narayandass, K. Kim and J. Yi: Physica B: Condens. Matter Vol. 358 (2005), p.27.

[14] J.I. Pankove: Optical Processes in Semiconductors (Dover, New York 1971).

[15] T.S. Moss: Proc. Phys. Soc., London Vol. B67 (1954), p.775.

[16] E. Burstein: Phys. Rev. Vol. 93 (1954), p.632.

[17] P.M. Nikolić, M.V. Nikolić, D. Luković, S. Savić and M.M. Ristić: Zeitschrift fur Metallkunde Vol. 95 (2004), p.147.

DOI: 10.3139/146.017928

[18] A. Rosencwaig and A. Gersho: J. Appl. Phys. Vol. 47 (1976), p.64.

[19] P.M. Nikolic, S.S. Vujatovic, D.M. Todorovic, M.B. Miletic, A. Golubovic, A.I. Bojicic, F. Kermendi, S. Djuric, K.T. Radulovic and J. Elazar: Jpn. J. Appl. Phys. Vol. 36 (1997), p.1006.

DOI: 10.1143/jjap.36.1006

[20] E.S. Yang: Fundamentals of semiconductor devices (Mc-Graw Hill 1978).

[21] J.A. Marby: Phys. Rev. Vol. 140 (1965), p.304.

Fetching data from Crossref.
This may take some time to load.