Modeling of a Plasma Etcher for Charging Free Processing of Nanoscale Structures

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Neutral beam etching is proposed as a candidate for reducing plasma-process-induced damage in nanoscale devices. In this paper, neutralization of ion beams due to both gas phase collisions and ion surface interactions based on a PIC (Particle in Cell) simulation of realistic Capacitively Coupled Plasma is presented. It was found that a satisfactory degree of neutralization might be achieved by a combined effect of charge transfer and surface collisions.

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Periodical:

Edited by:

Dragan P. Uskokovic, Slobodan K. Milonjic and Dejan I. Rakovic

Pages:

57-62

DOI:

10.4028/www.scientific.net/MSF.518.57

Citation:

M. Radmilović-Radjenović et al., "Modeling of a Plasma Etcher for Charging Free Processing of Nanoscale Structures ", Materials Science Forum, Vol. 518, pp. 57-62, 2006

Online since:

July 2006

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$35.00

[1] K. Hashimoto: Jpn. J. Appl. Phys. Vol. 33 (1994), p.6013.

[2] M.S. Hur, S.J. Kim, H.S. Lee and J.K. Lee: IEEE Trans. on Plasma Sci. Vol. 30 (2002), p.110.

[3] A.C. Eckbreth and J.W. Davis: Appl. Phys. Lett. Vol. 21 (1972), p.25.

[4] V.A. Godyak and R.B. Piejak: Phys. Rev. Lett. Vol. 65 (1990), p.996.

[5] J. Hopwood: Plasma Sources Sci. Technol. Vol. 1 (1992), p.109.

[6] V.A. Godyak and V.I. Kolobov: Phys. Rev. Lett. Vol. 81 (1998), p.369.

[7] S. Matsuo and M. Kiuchi: Jpn. J. Appl. Phys. Vol. 22 (1983), p. L210.

[8] T. Shigemizu, N. Ohno and H. Fujiyama: Mater. Sci. and Engineering A Vol. 139 (1991), p.312.

[9] Y. Mouzouris and J.E. Scharer: Physics of Plasmas Vol. 1 (1998), p.875.

[10] X. Guo, J.E. Scharer, Y. Mouzouris and L. Louis: Physics of Plasmas Vol. 6 (1999), p.3400.

[11] Y. Yoshida and T. Watanabe: Proceedings of the Symp. Dry Process, Tokyo (1983), p.4.

[12] K. Hashimoto: Jpn. J. Appl. Phys. Vol. 32 (1993), p.6109.

[13] R.A. Gottscho, C.W. Jurgensen and D.J. Vitkavage: J. Vac. Sci. & Technol. B Vol. 10 (1992), p.2133.

[14] A. Stojković, M. Radmilović-Radjenović and Z. Lj. Petrović: Mat. Sci. Forum Vol. 494 (2005), p.297.

[15] J. Matsui, N. Nakano, Z. Lj. Petrović and T. Makabe: Appl. Phys. Lett. Vol. 78 (2001), p.883.

[16] S. Murakawa and J. P. McVittie: Jpn. J. Appl. Phys. Vol. 33 (1994), p.2184.

[17] S. Samukawa, H. Othake and T. Mieno: J. Vac. Sci. Technol. A Vol. 14 (1996), p.3049.

[18] K. P. Giapis, T.A. Moore and T.K. Minton: J. Vac. Sci. Technol. A Vol. 13 (1995), p.959.

[19] A. Samukawa, K. Sakamoto and K. Ichiki: Jpn. J. Appl. Phys. Vol. 40 (2001), p. L997.

[20] K. Yokogawa, T. Yunogami and T. Mizutani: Jpn. J. Appl. Phys. Vol. 35 (1996), p. (1901).

[21] S.R. Leone: Jpn. J. Appl. Phys. Vol. 34 (1995), p. (2073).

[22] M.J. Gechner, T.K. Bennett and S.A. Cohen: Appl. Phys. Lett. Vol. 71 (1997), p.980.

[23] Z. Lj. Petrović and A.V. Phelps: Proceedings of the International Seminar on Reactive Plasmas 1991 Ed. T. Goto, Nagoya (1991), p.351.

[24] S. Samukawa, K. Sakamoto and K. Ichiki: J. Vac. Sci. Technol. A Vol. 20 (2002), p.1566.

[25] S. Panda and D.J. Economou: J. Vac. Sci. Technol. A Vol. 19 (2001), p.398.

[26] J.P. Verboncoeur, M.V. Alves, V. Vahedi and C.K. Birdsall: J. Comp. Phys. Vol. 104 (1993), p.321.

[27] M. Radmilović-Radjenović et al.: J. Phys. D: Appl. Phys. Vol. 38 (2005), p.950.

[28] Z. Lj. Petrović and V.D. Stojanović: J. Vac. Sci. Technol A Vol. 16 (1998), p.329.

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