Modeling of a Plasma Etcher for Charging Free Processing of Nanoscale Structures
Neutral beam etching is proposed as a candidate for reducing plasma-process-induced damage in nanoscale devices. In this paper, neutralization of ion beams due to both gas phase collisions and ion surface interactions based on a PIC (Particle in Cell) simulation of realistic Capacitively Coupled Plasma is presented. It was found that a satisfactory degree of neutralization might be achieved by a combined effect of charge transfer and surface collisions.
Dragan P. Uskokovic, Slobodan K. Milonjic and Dejan I. Rakovic
M. Radmilović-Radjenović et al., "Modeling of a Plasma Etcher for Charging Free Processing of Nanoscale Structures ", Materials Science Forum, Vol. 518, pp. 57-62, 2006