Modeling of a Plasma Etcher for Charging Free Processing of Nanoscale Structures

Abstract:

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Neutral beam etching is proposed as a candidate for reducing plasma-process-induced damage in nanoscale devices. In this paper, neutralization of ion beams due to both gas phase collisions and ion surface interactions based on a PIC (Particle in Cell) simulation of realistic Capacitively Coupled Plasma is presented. It was found that a satisfactory degree of neutralization might be achieved by a combined effect of charge transfer and surface collisions.

Info:

Periodical:

Edited by:

Dragan P. Uskokovic, Slobodan K. Milonjic and Dejan I. Rakovic

Pages:

57-62

DOI:

10.4028/www.scientific.net/MSF.518.57

Citation:

M. Radmilović-Radjenović et al., "Modeling of a Plasma Etcher for Charging Free Processing of Nanoscale Structures ", Materials Science Forum, Vol. 518, pp. 57-62, 2006

Online since:

July 2006

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Price:

$35.00

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