The non-destructive analysis by GIXRD allows us to determine the residual stress distribution as a function of XRD penetration depth and film thickness. A new development on the determination of residual stresses distribution is presented here. The procedure, based on the GIXRD geometry (referred to here as the ‘sin2ψ*’), enables non-destructive measurement of stresses gradient with only one diffraction family plan at a chosen depth taking into account the correction of measured direction. The chosen penetration depth is well defined for different combination of ψ and Φ and needs not to be changed during experimentation. This method was applied for measurement of residual stress gradient in Cu thin films. The obtained residual stress levels and their distribution were quite comparable with those determined by another multi-reflection method.