Interdiffusion and Stress Development in Thin Film Diffusion Couples
Thin film diffusion couples (Pd-Cu, individual layer thicknesses: 50 nm) have been prepared by DC-magnetron sputtering on silicon substrates coated with amorphous inter-layers (Si3N4 on top of SiO2). The microstructural development, phase formation and the stress evolution during diffusion annealing have been investigated employing Auger-electron spectroscopy in combination with sputter depth profiling, ex-situ and, in particular, in-situ X-ray diffraction measurements. Upon annealing at relatively low temperatures (175°C to 250°C) for durations up to 100 hours, considerable diffusional intermixing occurs. Interdiffusion is accompanied by the sequential formation of a new phase (Cu3Pd). The detected stress changes are discussed in terms of possible mechanisms of stress generation.
W. Reimers and S. Quander
Y. Kuru et al., "Interdiffusion and Stress Development in Thin Film Diffusion Couples", Materials Science Forum, Vols. 524-525, pp. 801-806, 2006