Interdiffusion and Stress Development in Thin Film Diffusion Couples

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Thin film diffusion couples (Pd-Cu, individual layer thicknesses: 50 nm) have been prepared by DC-magnetron sputtering on silicon substrates coated with amorphous inter-layers (Si3N4 on top of SiO2). The microstructural development, phase formation and the stress evolution during diffusion annealing have been investigated employing Auger-electron spectroscopy in combination with sputter depth profiling, ex-situ and, in particular, in-situ X-ray diffraction measurements. Upon annealing at relatively low temperatures (175°C to 250°C) for durations up to 100 hours, considerable diffusional intermixing occurs. Interdiffusion is accompanied by the sequential formation of a new phase (Cu3Pd). The detected stress changes are discussed in terms of possible mechanisms of stress generation.

Info:

Periodical:

Materials Science Forum (Volumes 524-525)

Edited by:

W. Reimers and S. Quander

Pages:

801-806

DOI:

10.4028/www.scientific.net/MSF.524-525.801

Citation:

Y. Kuru et al., "Interdiffusion and Stress Development in Thin Film Diffusion Couples", Materials Science Forum, Vols. 524-525, pp. 801-806, 2006

Online since:

September 2006

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$35.00

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