Scanning Tunnenling Spectroscopy of Oxidized 6H-SiC Surfaces

Abstract:

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Scanning tunneling microscopy and spectroscopy have been used to study the electronic states of oxidized 6H-SiC interfaces. The SiC surfaces were oxidized by annealing in an ultra-high vacuum chamber at 600−800°C under 1×10-7 Torr pressure of molecular oxygen. Tunneling spectra revealed two dominant states at –1.8 and 1.5 eV relative to the Fermi level, which lie outside the band gap region but are inhomogeneously broadened such that they extend into the gap, together with additional features within the band gap.

Info:

Periodical:

Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow

Pages:

1023-1026

DOI:

10.4028/www.scientific.net/MSF.527-529.1023

Citation:

S. Nie and R.M. Feenstra, "Scanning Tunnenling Spectroscopy of Oxidized 6H-SiC Surfaces", Materials Science Forum, Vols. 527-529, pp. 1023-1026, 2006

Online since:

October 2006

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$35.00

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