Fast Non-Contact Dielectric Characterization for SiC MOS Processing
Non-contact corona-voltage metrology is utilized to characterize as-grown thermal oxide films on 4H SiC substrates. Contact potential difference mapping is coupled with incremental application of corona charge to provide whole-wafer images of process related effects and multiplepoint capacitance-voltage characteristics respectively. Correspondence between wafer VCPD images and process details is suggested along with examples of fast electrical dielectric thickness determination and non-contact C-V characteristic acquisition.
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
A.M. Hoff and E. Oborina, "Fast Non-Contact Dielectric Characterization for SiC MOS Processing", Materials Science Forum, Vols. 527-529, pp. 1035-1038, 2006