Fast Non-Contact Dielectric Characterization for SiC MOS Processing

Abstract:

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Non-contact corona-voltage metrology is utilized to characterize as-grown thermal oxide films on 4H SiC substrates. Contact potential difference mapping is coupled with incremental application of corona charge to provide whole-wafer images of process related effects and multiplepoint capacitance-voltage characteristics respectively. Correspondence between wafer VCPD images and process details is suggested along with examples of fast electrical dielectric thickness determination and non-contact C-V characteristic acquisition.

Info:

Periodical:

Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow

Pages:

1035-1038

DOI:

10.4028/www.scientific.net/MSF.527-529.1035

Citation:

A.M. Hoff and E. Oborina, "Fast Non-Contact Dielectric Characterization for SiC MOS Processing", Materials Science Forum, Vols. 527-529, pp. 1035-1038, 2006

Online since:

October 2006

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Price:

$35.00

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