Fast Non-Contact Dielectric Characterization for SiC MOS Processing

Abstract:

Article Preview

Non-contact corona-voltage metrology is utilized to characterize as-grown thermal oxide films on 4H SiC substrates. Contact potential difference mapping is coupled with incremental application of corona charge to provide whole-wafer images of process related effects and multiplepoint capacitance-voltage characteristics respectively. Correspondence between wafer VCPD images and process details is suggested along with examples of fast electrical dielectric thickness determination and non-contact C-V characteristic acquisition.

Info:

Periodical:

Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow

Pages:

1035-1038

Citation:

A.M. Hoff and E. Oborina, "Fast Non-Contact Dielectric Characterization for SiC MOS Processing", Materials Science Forum, Vols. 527-529, pp. 1035-1038, 2006

Online since:

October 2006

Authors:

Export:

Price:

$41.00

[1] A.M. Hoff and D.K. DeBusk: Proc. Symp. M1, Electrochem. Soc. 196th Mtg. (1999).

[2] A.M. Hoff: Mat. Res. Soc. Symp. Proc. Vol. 815 (2004), pp.189-198.

[3] W.H. Brattain: Nobel Lecture, December 11, (1956).

[4] A.M. Hoff, T.C. Esry, and K. Nauka: Solid State Technology No. 7 (1996), pp.139-152.

[5] P. Edelman, A.M. Hoff, L. Jastrzebski, and J. Lagowski: US Patent 5, 773, 989 (1998).

[6] Semiconductor Diagnostics, Inc.: FAaST Tools, http: /www. sditampa. com Position Wafer Coordinates Optical thickness.