SiC HTCVD Simulation Modified by Sublimation Etching

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High temperature chemical vapor deposition (HTCVD) simulations of silicon carbide (SiC) were demonstrated with experimental results. A vertical cylindrical reactor was used in an RF inductive heating furnace and the temperature was more than 2200. SiH4 and C3H8 were used as source gases and H2 as carrier gas. A gas phase reaction model from the literature was used on the condition that the gas phase reaction is a quasi-equilibrium state. It was found that the major species were Si, Si2C, SiC2 and C2H2 in the gas phase reaction model as well as in the thermodynamic equilibrium calculation. Sublimation etching was considered in the surface reaction rates by modifying partial pressures of species with equilibrium vapor pressures. CFD-ACE+ and MALT2 software packages were used in the present calculation. The sticking coefficients were determined by fitting the calculated growth rates to the experimental ones. The simulated growth rate in a different reactor is in good agreement with the experimental value, using the same sticking coefficients. The present simulation could be useful to design a new reactor and to find optimum conditions.

Info:

Periodical:

Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow

Pages:

107-110

Citation:

Y. Kito et al., "SiC HTCVD Simulation Modified by Sublimation Etching", Materials Science Forum, Vols. 527-529, pp. 107-110, 2006

Online since:

October 2006

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Price:

$38.00

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[3] 0 2200 2250 2300 2350 2400 2450 Surface Temperature [�] Growth Rate [mm/h] Simulation Experiment (SiH4 + C3H8) =3. 55 kPa C/Si =1 Partial Pressure of (SiH4 + C3H8) [kPa] -0. 5 0.

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[3] 0 2200 2250 2300 2350 2400 2450 Surface Temperature [�] Growth Rate [mm/h] Simulation Experiment (SiH4 + C3H8) =3. 55 kPa C/Si =1 Partial Pressure of (SiH4 + C3H8) [kPa] -0. 5 0.

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